JANTXV2N3637UB-Transistor Overview
The JANTXV2N3637UB transistor is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial and military-grade electronics. Built to meet stringent JAN and JANTX standards, this transistor ensures excellent reliability under harsh environmental conditions. It features a high voltage rating and strong current handling capability, making it suited for power control circuits and signal amplification. With its proven ruggedness and consistent electrical characteristics, the device is ideal for demanding aerospace, defense, and industrial systems requiring dependable semiconductor components. For more information, visit IC Manufacturer.
JANTXV2N3637UB-Transistor Key Features
- High voltage rating: Supports up to 300 V collector-emitter voltage, allowing operation in high-voltage environments with enhanced safety margins.
- Robust current capacity: Maximum collector current rating of 10 A provides reliable performance in power switching and amplification tasks.
- Military-grade temperature range: Operates reliably from -65??C to +200??C, ensuring stable function in extreme thermal conditions.
- Complementary NPN transistor design: Enables easy integration into push-pull amplifier circuits and switching stages.
- Low saturation voltage: Minimizes power loss during switching, improving overall system efficiency.
- Hermetic metal can package: Offers superior protection against moisture and contaminants, enhancing long-term reliability.
- High gain characteristics: Provides effective amplification with consistent current gain (hFE) parameters.
JANTXV2N3637UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 300 V |
| Collector-Base Voltage (VCBO) | 350 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 10 A (max) |
| Power Dissipation (Ptot) | 150 W (max) |
| DC Current Gain (hFE) | 20 to 70 (depending on IC and VCE) |
| Transition Frequency (fT) | ?? 4 MHz |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | Hermetic TO-3 Metal Can |
JANTXV2N3637UB-Transistor Advantages vs Typical Alternatives
This transistor excels in high-voltage and high-current applications where reliability and thermal stability are critical. Compared to typical commercial transistors, it offers a wider operating temperature range and rugged packaging, making it suitable for military and aerospace systems. Its low saturation voltage reduces power losses, enhancing system efficiency. Additionally, its hermetic metal can package ensures greater protection against environmental factors, improving long-term operational reliability.
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Typical Applications
- Power switching circuits in aerospace and defense systems requiring robust and reliable transistor components capable of withstanding extreme environmental stress.
- Linear amplifier stages where consistent gain and high voltage tolerance are essential for signal integrity.
- Industrial motor control circuits benefiting from high current capacity and thermal stability under heavy load conditions.
- High-reliability military communication equipment utilizing hermetically sealed transistors for long-term stability and performance.
JANTXV2N3637UB-Transistor Brand Info
The JANTXV2N3637UB transistor is manufactured under stringent military and aerospace standards, ensuring adherence to JAN and JANTX certifications. This product is part of a trusted line of semiconductors designed for high-reliability applications where failure is not an option. The device is produced with rigorous quality control and testing protocols to meet the demanding requirements of defense contractors and industrial engineers. Its robust design and verified electrical performance make it a preferred choice for critical systems requiring long-term dependability.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current (IC) rating for this transistor is 10 amperes. This allows it to handle substantial current in power switching and amplification applications without compromising reliability.
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What temperature range can this transistor operate within?
This device operates reliably over a wide temperature range from -65??C to +200??C, making it suitable for harsh environments such as aerospace and military applications.
What packaging does the JANTXV2N3637UB transistor use?
It is housed in a hermetic TO-3 metal can package, which provides excellent protection against moisture, dust, and other contaminants, enhancing durability and long-term stability.
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What is the rated collector-emitter voltage for this transistor?
The collector-emitter voltage (VCEO) is rated at 300 volts, allowing the transistor to operate safely in high-voltage circuits without risk of breakdown.
Is this transistor suitable for commercial high-frequency applications?
With a transition frequency (fT) of approximately 4 MHz, this transistor is designed primarily for power switching and amplification at moderate frequencies rather than high-frequency commercial RF applications.
