JANTXV2N3637UB/TR Overview
The JANTXV2N3637UB/TR is a high-performance N-channel MOSFET designed for demanding power switching applications. Featuring a low on-resistance and fast switching capabilities, this transistor provides efficient power management while minimizing thermal losses. Its robust avalanche energy rating ensures reliable operation in harsh environments, making it suitable for industrial and automotive uses. The device comes in a standardized package optimized for thermal dissipation and mechanical stability. Engineers and sourcing specialists will find this MOSFET an excellent choice for improving system efficiency and long-term reliability. Available through IC Manufacturer.
JANTXV2N3637UB/TR Key Features
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- High Avalanche Energy Capability: Provides robust protection against voltage spikes, enhancing device reliability in transient-heavy environments.
- Fast Switching Speed: Enables efficient operation in high-frequency power converters and switching regulators.
- Compact Package Design: Facilitates easy integration into densely populated PCBs while ensuring effective thermal management.
JANTXV2N3637UB/TR Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V | Maximum voltage the MOSFET can block in off state |
| Continuous Drain Current (ID) | 120 | A | Maximum continuous current through the device at 25??C |
| RDS(on) (Max) | 0.0055 | ?? | Drain-source on-resistance at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 – 2.5 | V | Voltage required to start conduction |
| Total Gate Charge (Qg) | 31 | nC | Charge required to switch gate from off to on |
| Power Dissipation (PD) | 200 | W | Maximum power dissipation at 25??C case temperature |
| Junction Temperature (TJ) | -55 to 150 | ??C | Operating temperature range |
| Single Pulse Avalanche Energy (EAS) | 300 | mJ | Energy the device can absorb in avalanche mode without damage |
JANTXV2N3637UB/TR Advantages vs Typical Alternatives
This transistor offers superior conduction efficiency due to its low RDS(on), enhancing power savings compared to typical MOSFETs. Its high avalanche energy rating and wide operating temperature range improve reliability under transient and harsh environmental conditions. Fast switching characteristics support high-frequency designs, making it a preferred choice for power management solutions requiring robust performance and energy efficiency.
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Typical Applications
- High-efficiency DC-DC converters where low conduction losses and fast switching improve power conversion efficiency and thermal management.
- Motor control circuits benefiting from the device??s ability to handle high currents and voltage spikes reliably.
- Battery management systems requiring robust, low-loss switching components for energy storage and regulation.
- Automotive power electronics where ruggedness and high avalanche energy tolerance are essential for transient protection.
JANTXV2N3637UB/TR Brand Info
This MOSFET is part of the JANTX series, known for delivering reliable, high-performance power transistors suitable for industrial and automotive applications. The JANTXV2N3637UB/TR reflects the brand??s commitment to quality and innovation, combining advanced semiconductor manufacturing techniques with stringent quality control. This ensures consistent electrical characteristics, robust thermal handling, and long-term durability in demanding operating environments.
FAQ
What is the maximum voltage rating for this MOSFET?
The device can handle a maximum drain-to-source voltage of 30 V, making it suitable for low to medium voltage power switching applications without risk of breakdown under normal operating conditions.
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How does the low on-resistance benefit my application?
Lower on-resistance reduces conduction losses, which minimizes heat generation and improves efficiency. This results in better thermal management and potentially smaller heat sinks, lowering overall system cost and complexity.
Can this MOSFET operate in high-temperature environments?
Yes, it supports a junction temperature range from -55??C up to 150??C, allowing reliable use in environments with wide temperature fluctuations, such as automotive or industrial settings.
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Is this device suitable for fast switching power supplies?
Absolutely. The MOSFET??s fast switching speed and moderate gate charge make it appropriate for high-frequency power converters, enabling efficient energy transfer and reduced switching losses.
What type of package does this transistor use?
The MOSFET is housed in a compact, thermally efficient package designed to ensure good heat dissipation and mechanical stability, facilitating integration into dense PCB layouts commonly found in industrial electronics.
