JANTXV2N3637P-Transistor-PIND by JAN | High-Speed Switching Transistor | PIND Package

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits for various applications.
  • Featuring a PIND package, it offers a compact footprint that optimizes board space in dense circuit designs.
  • Its electrical characteristics support stable operation, ensuring consistent performance under typical usage conditions.
  • Ideal for switching and amplification tasks in communication devices, enhancing signal clarity and responsiveness.
  • Manufactured to meet standard quality protocols, this component ensures dependable long-term reliability in assemblies.
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JANTXV2N3637P-Transistor-PIND Overview

The JANTXV2N3637P is a PIND transistor designed for high-reliability detection and amplification applications. Engineered to meet military standards, it offers consistent performance under demanding environmental conditions. This transistor features a robust PNP silicon structure optimized for low noise and stable operation, making it ideal for signal detection circuits. Its hermetic metal can package ensures long-term durability against mechanical and thermal stresses. For engineers and sourcing specialists seeking a dependable transistor for precise signal handling, this component provides proven performance with guaranteed quality from IC Manufacturer.

JANTXV2N3637P-Transistor-PIND Key Features

  • High stability and low noise: Enables precise signal detection in sensitive electronic circuits, critical for accurate system responses.
  • Hermetically sealed metal can package: Ensures exceptional protection from environmental contaminants, enhancing long-term reliability.
  • Military-grade qualification: Guarantees consistent functionality in harsh operating conditions, supporting mission-critical applications.
  • Optimized PNP silicon transistor design: Provides efficient amplification with minimal distortion, improving overall circuit performance.

JANTXV2N3637P-Transistor-PIND Technical Specifications

Parameter Value
Transistor Type PNP Silicon
Package Hermetic Metal Can
Collector-Emitter Voltage (Vceo) 50 V
Collector Current (Ic) 50 mA
Gain Bandwidth Product (fT) 50 MHz
Transition Frequency 50 MHz
Operating Temperature Range -55 ??C to +125 ??C
Noise Figure Low (specific values per datasheet)
Base-Emitter Voltage (Vbe) Typically 0.7 V
Storage Temperature Range -65 ??C to +150 ??C

JANTXV2N3637P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior reliability and noise performance compared to standard commercial transistors. Its hermetic metal can package enhances environmental robustness, reducing failure rates in harsh conditions. The military-grade qualification ensures consistent operation over a wide temperature range, making it a preferred choice for precision detection and amplification tasks where accuracy and stability are paramount.

Typical Applications

  • Pulse Ionization Neutron Detectors (PIND) in nuclear instrumentation, leveraging the transistor??s low noise and high sensitivity for accurate signal processing in safety-critical environments.
  • High-reliability signal amplification circuits requiring stable gain over temperature variations.
  • Military and aerospace electronic systems that demand rugged components capable of enduring extreme conditions.
  • Detection and measurement instrumentation where precise and low-distortion transistor operation is essential.

JANTXV2N3637P-Transistor-PIND Brand Info

The JANTXV2N3637P transistor is manufactured under stringent quality controls aligned with military specifications. Its brand is recognized for delivering components that meet rigorous performance and reliability standards demanded by defense and aerospace sectors. The product line specializes in hermetically sealed transistors designed for applications where long-term operational stability and resistance to environmental stressors are critical.

FAQ

What is the primary function of the JANTXV2N3637P transistor in PIND applications?

This transistor serves as a key amplification element in Pulse Ionization Neutron Detectors, where it detects and amplifies weak ionization signals. Its low noise characteristics and stable gain enable precise and reliable measurement of neutron activity critical for safety monitoring.

How does the hermetic metal can package benefit the transistor??s performance?

The hermetic metal can protects the transistor from moisture, dust, and mechanical stresses, thereby maintaining consistent electrical performance over time. This packaging is essential for applications exposed to harsh environmental conditions, ensuring device longevity and reliability.

What temperature ranges can this transistor reliably operate within?

The device supports an operating temperature range from -55 ??C to +125 ??C and can be stored safely between -65 ??C and +150 ??C. This wide range allows it to be used in extreme environments such as aerospace and military systems without degradation.

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Is the JANTXV2N3637P suitable for commercial consumer electronics?

While it can function in various circuitry, this transistor is specifically designed and qualified for military and aerospace applications where stringent reliability and environmental standards are required. Commercial consumer devices typically do not require the same level of ruggedness and hermetic sealing.

What are the key electrical parameters to consider when integrating this transistor?

Engineers should focus on collector-emitter voltage rating (50 V), maximum collector current (50 mA), gain bandwidth product (50 MHz), and base-emitter voltage (~0.7 V). These parameters define the transistor??s operating limits and performance in amplification circuits.

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