JANTXV2N3636UB-Transistor Overview
The JANTXV2N3636UB transistor is a high-performance bipolar junction transistor designed for demanding industrial and military applications. It features a robust construction that ensures reliable operation under harsh environmental conditions, including extreme temperatures and mechanical stress. This transistor delivers excellent gain characteristics and stable switching capabilities, making it suitable for amplification and switching tasks in precision circuits. Manufactured to meet stringent quality standards, the device supports long-term reliability and consistent performance. Engineers and sourcing specialists rely on this transistor for applications requiring durability, high current handling, and dependable electrical characteristics. Available through IC Manufacturer, it integrates seamlessly into complex systems requiring rugged semiconductor components.
JANTXV2N3636UB-Transistor Key Features
- High Current Handling: Supports collector currents up to 15A, enabling efficient operation in power amplification and switching scenarios.
- Voltage Endurance: With a collector-emitter voltage rating of 60V, it ensures robust performance in medium-voltage circuits.
- Military-Grade Reliability: Compliant with JAN (Joint Army-Navy) specifications, providing enhanced ruggedness and longevity under extreme environmental stress.
- Thermal Stability: Designed with a maximum junction temperature of 200??C, allowing consistent function in high-temperature environments.
JANTXV2N3636UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 15 A |
| Power Dissipation (Ptot) | 125 W |
| Gain Bandwidth Product (fT) | 6 MHz (typical) |
| Junction Temperature (Tj max) | 200 ??C |
| Package Type | TO-3 Metal Can |
| Transition Frequency | 6 MHz |
| DC Current Gain (hFE) | 30 to 70 (typical range) |
JANTXV2N3636UB-Transistor Advantages vs Typical Alternatives
This transistor offers superior current capacity and voltage tolerance compared to standard BJTs, ensuring higher power handling without compromising reliability. Its compliance with military-grade standards makes it more robust against temperature extremes and mechanical stresses, providing enhanced longevity and consistent performance. These advantages support precise control in power amplification and switching applications where typical commercial transistors may fail or degrade faster.
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Typical Applications
- Power amplification in audio and RF circuits requiring stable gain and robust current handling for signal integrity and minimal distortion.
- Switching applications in industrial control systems that demand high voltage and current ratings for reliable operation.
- Military and aerospace equipment benefiting from the transistor??s rugged construction and compliance with harsh environmental standards.
- High-temperature environments where standard transistors cannot maintain performance due to thermal limitations.
JANTXV2N3636UB-Transistor Brand Info
The JANTXV2N3636UB is a product designed and manufactured under stringent quality controls to meet the rigorous requirements of military and aerospace sectors. It is part of a line of rugged bipolar junction transistors engineered for reliable performance in harsh operating conditions. The brand emphasizes durability, high electrical stability, and compliance with Joint Army-Navy (JAN) specifications, making this transistor a preferred choice for critical applications requiring dependable semiconductor components.
FAQ
What type of transistor is the JANTXV2N3636UB?
This device is an NPN bipolar junction transistor (BJT), designed for high-current and medium-voltage applications. Its structure supports efficient amplification and switching in demanding circuit environments.
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What is the maximum collector current rating of this transistor?
The maximum collector current for this transistor is rated at 15 amperes, allowing it to handle substantial load currents in power amplification and switching circuits without degradation.
What package type does the JANTXV2N3636UB use?
It is housed in a TO-3 metal can package, which provides excellent thermal dissipation and mechanical protection, contributing to its suitability for high-power and high-reliability applications.
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Is this transistor suitable for high-temperature environments?
Yes, the transistor supports a maximum junction temperature of up to 200??C, making it ideal for applications that operate under elevated temperature conditions without compromising performance.
How does the JANTXV2N3636UB compare to commercial-grade transistors?
This transistor is built to military (JAN) standards, offering enhanced ruggedness, higher voltage and current ratings, and superior thermal stability compared to typical commercial-grade transistors, making it more reliable in critical and harsh environments.
