JANTXV2N3635UB-Transistor Overview
The JANTXV2N3635UB transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification in demanding industrial applications. It features a high voltage rating of 350 V collector-emitter and a collector current capacity of up to 10 A, ensuring reliable operation under substantial load conditions. This transistor offers an excellent balance of gain and power handling, making it suitable for power management, motor control, and other high-current scenarios. Its rugged design meets military standards for durability and stability. For sourcing and technical support, visit IC Manufacturer.
JANTXV2N3635UB-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage (Vceo) of 350 V, it enables operation in high-voltage circuits, improving system robustness.
- High collector current capability: Supports up to 10 A continuous collector current, which is critical for power switching and amplification tasks.
- Low saturation voltage: Ensures efficient switching with minimal power loss, enhancing overall energy efficiency in power electronics.
- Military-grade reliability: Qualified to JAN (Joint Army-Navy) standards for operation in harsh environments, ensuring long-term reliability and performance.
JANTXV2N3635UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (Vceo) | 350 V |
| Collector-Base Voltage (Vcbo) | 450 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Continuous Collector Current (Ic) | 10 A |
| Power Dissipation (Pc) | 125 W |
| Gain Bandwidth Product (fT) | 8 MHz |
| DC Current Gain (hFE) | 25 (minimum) |
| Operating Junction Temperature (Tj) | -65??C to +200??C |
| Package Type | TO-3 Metal Can |
JANTXV2N3635UB-Transistor Advantages vs Typical Alternatives
This transistor offers superior high-voltage and high-current capabilities compared to many standard NPN devices, making it ideal for power-intensive industrial circuits. Its low saturation voltage reduces switching losses, improving efficiency. Additionally, its military-grade qualification ensures enhanced reliability under extreme environmental conditions, outperforming typical commercial-grade transistors in both durability and operational stability.
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Typical Applications
- Power switching circuits requiring robust high-voltage and high-current handling with reliable performance in industrial environments.
- Motor control applications where efficient switching and thermal stability are critical for maintaining consistent operation.
- Amplification stages in power supplies and converters that demand high gain and power dissipation capability.
- Military and aerospace systems requiring components that meet stringent reliability and temperature operating ranges.
JANTXV2N3635UB-Transistor Brand Info
The JANTXV2N3635UB transistor is part of a trusted lineup known for ruggedness and high reliability, specifically engineered to meet military and industrial standards. This product ensures consistent performance in challenging applications, supported by rigorous testing and quality assurance processes. Its design in a TO-3 metal package offers superior thermal management, reinforcing its suitability for power-intensive environments where durability and consistent switching are paramount.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current for this device is 10 A, allowing it to handle substantial load currents typical in power switching and amplification applications without compromising reliability.
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What voltage ratings does the transistor support?
This transistor supports a collector-emitter voltage of up to 350 V and a collector-base voltage of 450 V, enabling its use in high-voltage industrial circuits and power control systems.
How does the TO-3 package benefit the transistor’s performance?
The TO-3 metal can package provides excellent heat dissipation, which helps maintain thermal stability during high power operation, enhancing the transistor??s reliability and lifespan in demanding applications.
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Is this transistor suitable for military or aerospace applications?
Yes, it is qualified under the JAN standard, ensuring it meets stringent military-grade requirements for performance, durability, and temperature tolerance, making it suitable for critical aerospace and defense systems.
What is the typical gain bandwidth product of this transistor?
The gain bandwidth product (fT) is approximately 8 MHz, which supports effective high-frequency switching and amplification performance in various industrial electronics circuits.
