JANTXV2N3635UB/TR Overview
The JANTXV2N3635UB/TR is a high-performance bipolar junction transistor designed for switching and amplification applications in industrial and military environments. Featuring a robust TO-126 metal can package, it ensures enhanced thermal dissipation and long-term reliability under demanding conditions. Rated for a collector current up to 3A and a collector-emitter voltage of 35V, this transistor offers a balanced combination of power handling and switching speed. Its high gain bandwidth product and low saturation voltage make it ideal for efficient signal amplification and fast switching tasks. Available in tape and reel format, it supports streamlined automated assembly processes. For detailed specifications and sourcing, visit IC Manufacturer.
JANTXV2N3635UB/TR Key Features
- High Collector Current Capacity: Supports up to 3A, enabling robust switching and amplification in power circuits.
- Moderate Voltage Rating: Collector-emitter voltage of 35V, suitable for a wide range of industrial signal processing applications.
- Low Saturation Voltage: Improves power efficiency by minimizing voltage drop during conduction states.
- TO-126 Metal Can Package: Provides superior thermal performance and mechanical durability for extended reliability in harsh environments.
- High DC Current Gain (hFE): Ensures strong amplification capability, facilitating precise control in switching circuits.
- Fast Switching Speed: Enables efficient operation in timing-sensitive applications, optimizing system responsiveness.
- Automated Assembly Compatibility: Supplied in tape and reel packaging, supporting high-volume manufacturing processes.
JANTXV2N3635UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (V_CEO) | 35 | V |
| Collector-Base Voltage (V_CBO) | 60 | V |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Collector Current (I_C) | 3 | A |
| Power Dissipation (P_TOT) | 1.25 | W |
| DC Current Gain (hFE) | 40?C320 | ?? |
| Transition Frequency (f_T) | 100 | MHz |
| Operating Junction Temperature (T_J) | -65 to +200 | ??C |
JANTXV2N3635UB/TR Advantages vs Typical Alternatives
This transistor offers a compelling balance of high current capacity and voltage tolerance in a thermally efficient metal package, outperforming many plastic-encapsulated alternatives. Its high gain and fast switching characteristics enhance performance in precision control circuits, while the robust thermal limits ensure reliability under harsh operating conditions. Supplied in tape and reel format, it facilitates efficient assembly, reducing manufacturing costs and lead times.
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Typical Applications
- Industrial motor control circuits requiring reliable high-current switching with low saturation losses for improved energy efficiency.
- Signal amplification stages in communication equipment where moderate voltage and high gain are essential.
- Power management and regulation in embedded systems benefiting from robust thermal handling and precise switching.
- Military-grade electronics that demand durable packaging and wide operating temperature ranges for field applications.
JANTXV2N3635UB/TR Brand Info
Manufactured by a leading semiconductor supplier, this transistor series is engineered for demanding applications requiring high reliability and consistent performance. The product adheres to stringent industrial standards, ensuring compatibility with automated assembly lines and long-term operational stability. The brand is recognized for delivering components that meet rigorous specifications for critical electronic systems.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current is rated at 3 amperes, allowing it to handle relatively high power loads in switching and amplification circuits without compromising device integrity.
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What package type does the transistor use, and why is it beneficial?
This device is housed in a TO-126 metal can package, which provides improved thermal dissipation and mechanical robustness compared to plastic packages, enhancing reliability in high-temperature and demanding environments.
Can this transistor operate in extreme temperature conditions?
Yes, it supports an operating junction temperature range from -65??C up to +200??C, making it suitable for use in harsh environments such as industrial or military applications.
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How does the gain bandwidth product affect performance?
The gain bandwidth product of 100 MHz indicates the transistor can amplify signals effectively at high frequencies, making it well-suited for fast switching and RF amplification tasks.
Is the device compatible with automated manufacturing processes?
Yes, it is supplied in tape and reel format, enabling compatibility with automated pick-and-place equipment, which helps streamline mass production and reduce assembly errors.
