JANTXV2N3635L-Transistor Overview
The JANTXV2N3635L is a high-performance silicon NPN bipolar junction transistor designed for rugged military and industrial applications. It features a low noise figure and high gain, making it ideal for sensitive signal amplification and switching tasks. This transistor operates reliably across a wide temperature range, ensuring consistent performance in demanding environments. Its robust construction complies with JAN (Joint Army-Navy) standards, guaranteeing enhanced durability and long-term stability. Engineers and sourcing specialists can rely on this device for critical applications requiring dependable high-frequency operation and superior electrical characteristics. For detailed sourcing, visit IC Manufacturer.
JANTXV2N3635L-Transistor Key Features
- High current gain: Provides efficient amplification with a typical hFE value optimized for low-level signal processing.
- Low noise figure: Minimizes signal distortion, critical for sensitive RF and audio frequency applications.
- Wide operating voltage range: Supports collector-emitter voltages up to 80V, suitable for high-voltage switching.
- Military-grade quality: Constructed to meet JAN specifications ensuring reliability under harsh environmental conditions.
- High transition frequency (fT): Enables fast switching speeds up to 100 MHz for high-frequency circuit designs.
- Robust thermal characteristics: Supports operation up to 200??C junction temperature, enhancing reliability in elevated temperature environments.
- Standard TO-18 metal can package: Facilitates easy integration and excellent thermal dissipation in compact circuit layouts.
JANTXV2N3635L-Transistor Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | |
| Collector-Emitter Voltage (Vceo) | 80 | Volts |
| Collector Current (Ic) | 0.8 | Amperes |
| Power Dissipation (Pd) | 1 | Watts |
| Transition Frequency (fT) | 100 | MHz |
| Gain Bandwidth Product | 100 | MHz |
| Noise Figure | 2.2 | dB (typical) |
| Junction Temperature (Tj) | 200 | ??C |
| Package | TO-18 Metal Can | |
| hFE (DC Current Gain) | 40?C240 | Typical Range |
JANTXV2N3635L-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its military-grade construction and high transition frequency, providing superior reliability and fast switching compared to generic transistors. Its low noise figure and wide voltage range enable precise amplification with minimal distortion, critical for sensitive signal processing. Enhanced thermal tolerance and rugged packaging further ensure dependable operation in harsh industrial or defense environments, making it a preferred choice over standard commercial alternatives.
🔥 Best-Selling Products
Typical Applications
- High-frequency amplifier stages in RF communication systems requiring low noise and stable gain for signal integrity.
- Switching applications in military and aerospace circuits where reliability under extreme conditions is essential.
- Industrial control systems needing durable transistors capable of sustained operation at elevated temperatures.
- Signal processing in measurement and instrumentation equipment demanding consistent electrical performance.
JANTXV2N3635L-Transistor Brand Info
The JANTXV2N3635L transistor is manufactured under strict military standards, ensuring compliance with JAN (Joint Army-Navy) quality and reliability requirements. This product is part of a series of rugged bipolar transistors designed for high-performance applications where durability and precision matter most. The brand behind this transistor specializes in semiconductor devices that meet or exceed industry benchmarks for military and aerospace use, providing engineers with trusted components for mission-critical designs.
FAQ
What is the maximum collector-emitter voltage rating for this transistor?
The maximum collector-emitter voltage (Vceo) is rated at 80 volts, allowing the transistor to operate safely in circuits with relatively high voltage levels without risk of breakdown.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can this transistor be used in high-frequency applications?
Yes, it supports a transition frequency (fT) of up to 100 MHz, making it suitable for many RF and high-speed switching applications where fast response times are required.
What package type does this transistor come in?
This device is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical robustness for demanding environments.
📩 Contact Us
Is the JANTXV2N3635L suitable for operation in harsh environments?
Absolutely, it is built to meet JAN military specifications, ensuring reliable performance in extreme temperatures and conditions commonly found in aerospace and defense applications.
What is the typical DC current gain range for this transistor?
The typical DC current gain (hFE) ranges from 40 to 240, providing flexibility for various amplification requirements depending on the specific circuit design.
