JANTXV2N3507U4-Transistor Overview
The JANTXV2N3507U4 is a high-reliability silicon transistor designed for applications requiring robust switching and amplification performance in harsh environments. Its military-grade construction ensures stable operation with enhanced temperature tolerance and long-term durability. Optimized for medium power applications, it offers a collector-emitter voltage rating suitable for demanding industrial and aerospace systems. This transistor delivers consistent gain and switching characteristics, making it a dependable choice for engineers seeking precision and ruggedness. For detailed technical specifications and sourcing, visit IC Manufacturer.
JANTXV2N3507U4-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Silicon Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 2 A |
| Power Dissipation (Ptot) | 30 W |
| Transition Frequency (fT) | 80 MHz |
| DC Current Gain (hFE) | 40 to 160 (varies with test conditions) |
| Operating Temperature Range | -55??C to +200??C |
| Package Type | TO-39 Metal Can |
| Gain Bandwidth Product | 80 MHz |
JANTXV2N3507U4-Transistor Key Features
- High Voltage Tolerance: With a collector-emitter voltage rating of 60 V, it supports medium power switching reliably without breakdown risks.
- Wide Operating Temperature Range: Certified to operate from -55??C up to +200??C, ensuring dependable performance in extreme environmental conditions.
- Robust Metal Can Packaging: The TO-39 package provides excellent thermal dissipation and mechanical protection, enhancing device longevity and reliability.
- Consistent Current Gain: Stable hFE values across test conditions promote predictable amplification, easing circuit design and quality control.
Typical Applications
- Industrial control systems requiring rugged transistor switches that maintain performance under wide temperature fluctuations and mechanical stress.
- Aerospace and military electronics where component reliability and resistance to environmental extremes are critical for mission success.
- Amplifier circuits in communication equipment demanding consistent linearity and gain stability for signal integrity.
- Power management modules within embedded systems that require medium current handling and thermal robustness.
JANTXV2N3507U4-Transistor Advantages vs Typical Alternatives
This transistor excels in reliability and operational stability compared to standard commercial devices. Its enhanced temperature tolerance and robust packaging ensure superior performance in industrial and military environments. The combination of medium power capacity and consistent gain characteristics offers engineers a trustworthy component that reduces failure rates and maintenance needs, making it a preferred alternative for critical applications requiring durable and precise transistor solutions.
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JANTXV2N3507U4-Transistor Brand Info
The JANTXV2N3507U4 is a product aligned with military-grade transistor standards, often produced by established semiconductor manufacturers specializing in rugged, high-reliability components. These devices are manufactured under strict quality and screening processes to meet or exceed MIL-STD requirements. The brand behind this transistor is recognized for supplying dependable components to defense, aerospace, and industrial markets where performance under stress and longevity are mandatory. This transistor is part of a family known for consistent quality and trusted performance across demanding applications.
FAQ
What is the maximum collector current rating of this transistor?
The transistor is rated for a maximum collector current of 2 amperes, suitable for medium power switching and amplification tasks within its specified operating conditions.
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Can this transistor operate at high temperatures?
Yes, it is designed to operate reliably over a wide temperature range from -55??C up to +200??C, making it appropriate for harsh environments where temperature extremes are common.
What packaging does the JANTXV2N3507U4 use and why is it important?
This transistor uses a TO-39 metal can package, which offers excellent thermal conductivity and mechanical protection, enhancing device durability and performance stability.
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Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of 80 MHz, it is suitable for







