JANTXV2N3507L-Transistor Overview
The JANTXV2N3507L-Transistor is a high-voltage, NPN bipolar junction transistor designed for demanding industrial and military applications. It offers robust performance with a collector-emitter voltage rating of 350 V and collector current capability up to 3 A. This transistor is built to meet stringent reliability standards, featuring a hermetically sealed metal can package that ensures long-term durability under harsh environmental conditions. Optimized for switching and amplification tasks, it provides low saturation voltage and reliable gain parameters, making it a versatile choice for power regulation, signal amplification, and control circuits. Sourced from a trusted supplier, this transistor supports precision and stability required in critical electronic designs. Visit IC Manufacturer for more details.
JANTXV2N3507L-Transistor Key Features
- High voltage tolerance: Supports up to 350 V collector-emitter voltage, enabling use in high-voltage switching and amplification applications.
- Robust collector current capacity: Handles continuous collector currents up to 3 A, ensuring reliable performance in power management circuits.
- Hermetic metal can packaging: Provides enhanced environmental protection and long-term reliability under industrial and military conditions.
- Low saturation voltage: Minimizes power loss during switching, improving overall energy efficiency in power circuits.
- High current gain (hFE): Enables effective signal amplification and precise control in analog and digital applications.
- Temperature resilience: Designed to operate effectively across a wide temperature range, suitable for harsh environments.
- Compatibility with standard mounting: Facilitates easy integration into existing PCB layouts and industrial systems.
JANTXV2N3507L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 350 V |
| Collector-Base Voltage (VCBO) | 350 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 3 A (continuous) |
| Power Dissipation (Ptot) | 40 W |
| DC Current Gain (hFE) | 40 to 160 (varies with IC and conditions) |
| Transition Frequency (fT) | 50 MHz (typical) |
| Operating Junction Temperature (TJ) | -65??C to +200??C |
| Package Type | Hermetic metal can (TO-39) |
JANTXV2N3507L-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling capabilities compared to typical low-power alternatives, making it ideal for high-reliability industrial and military applications. Its hermetically sealed metal can package enhances durability against moisture and contaminants, providing longer operational life. Additionally, the low saturation voltage and stable gain improve circuit efficiency and signal integrity. These factors collectively contribute to better performance and reliability where standard plastic-encapsulated transistors may fall short.
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Typical Applications
- High-voltage switching circuits requiring robust transistor operation and consistent switching times under demanding conditions.
- Power amplification stages in industrial control systems where precise and reliable gain is critical.
- Military and aerospace electronics that demand hermetic sealing and wide temperature operation for harsh environments.
- Voltage regulation and power supply circuits benefiting from low saturation voltage and high current capabilities.
JANTXV2N3507L-Transistor Brand Info
The JANTXV2N3507L-Transistor is a product designed under strict quality standards for high-reliability sectors, including military and aerospace. Manufactured with advanced semiconductor processes and encased in a hermetically sealed TO-39 metal can, it ensures enhanced protection and performance longevity. This product line is known for meeting rigorous MIL-STD and industrial specifications, offering engineers a dependable component for critical applications where quality and durability cannot be compromised.
FAQ
What is the maximum voltage rating of this transistor?
The maximum collector-emitter voltage rating is 350 V, allowing the transistor to handle high-voltage circuits safely without breakdown under specified conditions.
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Can this transistor operate in harsh environmental conditions?
Yes, the hermetically sealed metal can package and wide operating temperature range (-65??C to +200??C) make it suitable for harsh and demanding environments, including military and aerospace applications.
What is the typical current gain (hFE) range for this device?
The DC current gain ranges from approximately 40 to 160 depending on the collector current and operating conditions, providing flexibility for amplification and switching tasks.
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How does the low saturation voltage benefit circuit efficiency?
Lower saturation voltage reduces power loss during transistor switching, improving overall energy efficiency and reducing heat generation in power regulation and amplification circuits.
Is this transistor compatible with standard PCB mounting practices?
Yes, it uses a standard TO-39 metal can package, which is widely supported by typical through-hole PCB layouts, facilitating easy integration into existing designs.
