JANTXV2N3507AL-Transistor by JAN | High-Power Switching Transistor | TO-220 Package

  • This transistor controls current flow in circuits, enabling efficient signal amplification and switching.
  • Designed with a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • Its compact package type reduces board space, aiding in tighter circuit layouts and lightweight designs.
  • Ideal for use in power regulation modules, it improves device performance through reliable switching.
  • Manufactured to meet strict quality standards, it delivers consistent performance over extended use.
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JANTXV2N3507AL-Transistor Overview

The JANTXV2N3507AL-Transistor is a high-performance PNP bipolar junction transistor designed for military and aerospace-grade applications requiring stringent reliability and robust operation. This transistor features enhanced gain characteristics and low saturation voltage, making it ideal for switching and amplification in demanding environments. Its JAN (Joint Army-Navy) certification ensures compliance with military standards for ruggedness, quality, and long-term stability. Engineers and sourcing specialists will value its consistent electrical performance under harsh conditions, making it suitable for critical industrial and defense electronics systems. For more detailed product information, visit the IC Manufacturer website.

JANTXV2N3507AL-Transistor Key Features

  • High Current Gain (hFE): Provides reliable amplification performance, ensuring signal integrity in analog circuits and switching applications.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss and heat generation, improving overall system efficiency and thermal management.
  • JAN Military Qualification: Guarantees superior quality, durability, and resistance to environmental stress for critical aerospace and defense deployments.
  • Wide Operating Temperature Range: Supports operation in extreme temperature environments, enhancing flexibility in rugged industrial applications.

JANTXV2N3507AL-Transistor Technical Specifications

Parameter Value Unit
Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 2 A
Power Dissipation (Ptot) 1.2 W
Current Gain (hFE) 40 to 320
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +200 ??C
Package Type TO-18 Metal Can

JANTXV2N3507AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and performance under extreme conditions compared to standard commercial-grade devices. Its military-grade certification ensures enhanced durability, making it a preferred choice for applications where sensitivity and long-term stability are critical. Lower saturation voltage and higher gain translate to improved efficiency and accuracy in circuit operation, providing a competitive edge over typical alternatives in industrial and aerospace environments.

Typical Applications

  • Military and aerospace electronic systems requiring rugged switching and amplification with high reliability across wide temperature ranges.
  • High-frequency analog circuits where stable gain and low noise are essential for signal integrity.
  • Industrial control systems demanding robust transistors that maintain performance under harsh operational stresses.
  • Power management circuits where low saturation voltage helps reduce power dissipation and thermal challenges.

JANTXV2N3507AL-Transistor Brand Info

The JANTXV2N3507AL-Transistor is produced under strict military standards ensuring quality and performance consistency. It is part of a family of transistors designed to meet the rigorous demands of defense, aerospace, and industrial applications. The brand behind this device is recognized for delivering components with proven reliability, comprehensive qualification testing, and support for critical electronic systems where failure is not an option.

FAQ

What does the JAN certification mean for this transistor?

JAN stands for Joint Army-Navy, indicating the transistor meets stringent military specifications for reliability, quality, and environmental resistance. This certification ensures the device performs consistently even in demanding aerospace and defense contexts.

What is the maximum collector current this transistor can handle?

The maximum continuous collector current for this device is 2 amperes, making it suitable for moderately high-power applications requiring reliable switching or amplification.

What temperature range can this transistor operate within?

This transistor supports a broad temperature range from -55??C to +200??C, allowing operation in extreme environmental conditions commonly encountered in military and industrial applications.

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How does the low collector-emitter saturation voltage benefit circuit design?

A low saturation voltage reduces power loss and heat generation during transistor switching, enhancing efficiency and reducing thermal management requirements in the overall circuit design.

What package type is used for this transistor and why is it important?

The transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, critical for high-reliability applications requiring stable performance over time.

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