JANTXV2N3506L-Transistor by JAN | High-Speed Switching Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Its voltage rating supports stable operation under demanding electrical conditions, ensuring consistent performance.
  • The compact package design allows for board-space savings, facilitating integration into dense circuit layouts.
  • Ideal for use in power regulation modules, it helps maintain system stability and responsiveness.
  • Manufactured with quality checks to ensure durability and reliable long-term operation in diverse environments.
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JANTXV2N3506L-Transistor Overview

The JANTXV2N3506L is a high-performance NPN bipolar junction transistor designed for demanding industrial and military applications. Featuring robust voltage and current handling capabilities, it offers reliable switching and amplification in high-power circuits. This transistor supports enhanced thermal stability and low leakage currents, making it ideal for precision and rugged environments. Manufactured to stringent JAN (Joint Army-Navy) standards, the device ensures consistent operation under harsh conditions. Engineers and sourcing specialists will find this transistor well-suited for critical applications requiring durability and dependable performance. For detailed product sourcing, visit IC Manufacturer.

JANTXV2N3506L-Transistor Key Features

  • High voltage rating: Supports collector-emitter voltages up to 350V, enabling use in power amplifiers and switching regulators with elevated voltage requirements.
  • Robust collector current: Handles collector currents up to 6A, providing sufficient drive capability for industrial motor control and power management circuits.
  • Military-grade reliability: Built to JAN specifications for enhanced durability and consistent performance in extreme temperature and environmental conditions.
  • Low saturation voltage: Ensures efficient switching with minimal power loss, improving overall circuit efficiency and thermal management.

JANTXV2N3506L-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 350 V
Collector Current (IC) 6 A
Power Dissipation (Ptot) 75 W
Transition Frequency (fT) 2.5 MHz
Gain Bandwidth Product ?? (not specified)
Package Type TO-3 Metal Can
Operating Junction Temperature (TJ) -65 to +200 ??C
DC Current Gain (hFE) 20 to 70 (depending on collector current)

JANTXV2N3506L-Transistor Advantages vs Typical Alternatives

This transistor outperforms many standard power transistors by offering a combination of high voltage and current capabilities with military-grade reliability. Its low saturation voltage reduces power dissipation during switching, enhancing energy efficiency. The device??s rugged TO-3 package ensures superior heat dissipation compared to plastic encapsulated alternatives, improving operational stability in harsh environments. These factors make it a preferred choice for industrial and defense applications demanding precision and durability.

Typical Applications

  • Power amplification in audio and RF circuits, where high voltage and current handling ensure reliable signal processing with minimal distortion.
  • Industrial motor control systems requiring robust switching components capable of sustaining heavy loads and thermal stress.
  • High-voltage switching regulators and power supplies, benefiting from the transistor??s efficient switching performance and thermal resilience.
  • Military and aerospace electronics, where compliance with JAN standards guarantees dependable operation under extreme environmental conditions.

JANTXV2N3506L-Transistor Brand Info

The JANTXV2N3506L transistor is a part of a specialized product line designed to meet Joint Army-Navy (JAN) specifications, ensuring rigorous quality and reliability standards. This product reflects the commitment of its manufacturer to deliver components suited for mission-critical and industrial-grade applications. Its robust construction and precise electrical characteristics are backed by thorough testing processes, making it a trusted component in high-reliability systems worldwide.

FAQ

What is the maximum operating voltage of this transistor?

The transistor supports a maximum collector-emitter voltage of 350 volts, enabling it to operate reliably in high-voltage circuits such as power amplifiers and switching regulators.

Can this transistor handle high current applications?

Yes, it is rated for a collector current up to 6 amperes, making it suitable for applications requiring significant current handling like motor control and power management.

What type of package does this transistor come in?

This device is housed in a TO-3 metal can package, which provides excellent thermal dissipation and mechanical robustness compared to plastic packages.

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Is this transistor suitable for military or aerospace use?

Absolutely. The transistor is manufactured to meet JAN standards, ensuring it can withstand extreme temperatures and environments typically encountered in military and aerospace applications.

What is the typical gain range for this transistor?

The DC current gain (hFE) ranges from 20 to 70 depending on the collector current, allowing engineers to predict amplification performance within various circuit configurations.

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