JANTXV2N3506AU4-Transistor NPN Power Transistor in TO-220 Package by ON Semiconductor

JANTXV2N3506AU4-Transistor Overview

The JANTXV2N3506AU4 transistor is a high-reliability bipolar junction transistor (BJT) designed for demanding industrial and military-grade applications. It features a silicon NPN structure optimized for switching and amplification tasks in harsh environments. This transistor offers robust electrical performance with a maximum collector-emitter voltage of 60 V and a continuous collector current of 1.5 A, making it suitable for medium-power circuits. Its hermetic metal can package ensures enhanced thermal stability and long-term durability. Ideal for engineers and sourcing specialists focused on rugged, dependable semiconductor components, this transistor supports applications requiring precise switching and amplification. For more detailed technical and purchase information, visit IC Manufacturer.

JANTXV2N3506AU4-Transistor Technical Specifications

JANTXV2N3506AU4-Transistor Key Features

• High Voltage Capability: Supports up to 60 V collector-emitter voltage, enabling reliable operation in medium-power switching circuits.
• Robust Current Handling: Continuous collector current of 1.5 A allows efficient control of moderate loads without thermal stress.
• Wide Operating Temperature: Rated from -55??C to +200??C, ensuring consistent performance in extreme industrial or aerospace environments.
• Hermetic Metal Can Packaging: Provides enhanced thermal dissipation and environmental protection, contributing to long-term reliability.
• High Transition Frequency: 100 MHz transition frequency supports fast switching and amplification in RF and high-speed applications.
• Broad DC Current Gain Range: Gain between 40 and 160 offers design flexibility for amplification stages requiring variable gain settings.
• Military-Grade Quality: Built to stringent standards for durability, making it ideal for critical defense and aerospace electronics.

Typical Applications

• Switching and amplification in military and aerospace electronics, where reliability and high temperature tolerance are critical.
• Industrial control systems requiring rugged transistors capable of handling moderate power loads with stable gain.
• High-frequency signal amplification in communication equipment benefiting from the device??s 100 MHz transition frequency.
• Test and measurement instrumentation designed for harsh environments, leveraging the transistor??s hermetic packaging and operating range.

JANTXV2N3506AU4-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its superior thermal endurance and hermetic metal can package, providing enhanced reliability versus plastic-cased alternatives. Its wide operating temperature range and robust current handling make it preferable for harsh industrial and military applications. The combination of high voltage tolerance and fast switching frequency