JANTXV2N3506AL-Transistor NPN Power Transistor – JANTXV2N3506AL, TO-220 Package

  • This transistor amplifies and switches electronic signals, enabling efficient control in various circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package design allows for board-space savings, ideal for densely packed electronic assemblies.
  • Used in power regulation circuits, it helps maintain stable output, improving device reliability and efficiency.
  • Manufactured under strict quality standards, it offers dependable operation across diverse environmental conditions.
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产品上方询盘

JANTXV2N3506AL-Transistor Overview

The JANTXV2N3506AL is a high-performance NPN bipolar junction transistor designed for demanding industrial and military-grade applications. It offers robust electrical characteristics, including a collector-emitter voltage rating of 100V and a continuous collector current of 8A, ensuring reliable switching and amplification in power control circuits. Its JAN (Joint Army-Navy) specification guarantees enhanced ruggedness and consistency under harsh conditions. This transistor is optimized for high power dissipation with a maximum of 115W, making it suitable for applications requiring efficient thermal management. Engineers and sourcing specialists can rely on this component for consistent performance and long-term durability from IC Manufacturer.

JANTXV2N3506AL-Transistor Key Features

  • High voltage rating: With a collector-emitter voltage (Vceo) of 100V, it supports operation in high-voltage switching circuits, enhancing design flexibility.
  • High current capability: The 8A continuous collector current rating enables efficient handling of power loads, critical for industrial power amplifiers and motor control.
  • Rugged JAN military specification: Certified for stringent environmental and electrical performance, ensuring reliability in aerospace and defense systems.
  • Power dissipation: Supports up to 115W, allowing for effective thermal management in power-intensive applications.

JANTXV2N3506AL-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 120 V
Emitter-Base Voltage (Vebo) 7 V
Continuous Collector Current (Ic) 8 A
Power Dissipation (Ptot) 115 W
DC Current Gain (hFE) 40 to 160 (varies with test conditions)
Transition Frequency (fT) 3 MHz (typical)
Package Type TO-3 Metal Can

JANTXV2N3506AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage ratings compared to typical general-purpose transistors, making it ideal for high-reliability industrial and military applications. Its JAN certification ensures enhanced ruggedness and consistent performance under extreme conditions. The higher current and power dissipation capabilities translate to increased efficiency and reduced thermal stress, providing a clear advantage in power amplifier and switching designs where reliability and robustness are critical.

Typical Applications

  • Power amplifiers in industrial control systems requiring high voltage and current handling with reliable switching performance.
  • Military and aerospace equipment where ruggedness and compliance with JAN standards are mandatory.
  • Motor control circuits demanding sustained high current and efficient thermal dissipation.
  • High-power switching applications in power supplies and converters with stringent reliability requirements.

JANTXV2N3506AL-Transistor Brand Info

This transistor is manufactured under strict JAN (Joint Army-Navy) military standards, reflecting its design for high reliability and ruggedness. The brand focuses on delivering components that meet or exceed military-grade quality assurances, making the JANTXV2N3506AL suitable for critical applications where long-term stability and performance consistency are vital. Its TO-3 metal can package further enhances thermal performance and mechanical durability, aligning with the brand??s commitment to robust industrial semiconductor solutions.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a continuous collector current of up to 8 amperes, allowing it to handle significant current loads required in power amplification and switching applications.

What voltage levels can this transistor safely operate at?

This device features a collector-emitter voltage rating of 100 volts and a collector-base voltage rating of 120 volts, ensuring it can operate safely in high-voltage environments without risk of breakdown.

How does the JAN specification affect this transistor??s reliability?

JAN certification means the transistor is qualified for military use, adhering to stringent environmental and electrical stress testing, which guarantees enhanced reliability and ruggedness for critical and harsh operating conditions.

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产品中间询盘

What package type is used for this transistor, and why does it matter?

The transistor is housed in a TO-3 metal can package, which offers superior thermal dissipation and mechanical protection, essential for maintaining stable operation under high power dissipation.

Can this transistor be used in high-frequency applications?

While primarily designed for power switching and amplification, the transistor has a transition frequency of approximately 3 MHz, making it suitable for moderate-frequency applications but not optimized for very high-frequency circuits.

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