JANTXV2N3501UB-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

JANTXV2N3501UB-Transistor Overview

The JANTXV2N3501UB is a high-reliability NPN bipolar junction transistor designed for military and aerospace applications requiring strict performance standards. Built to meet JAN (Joint Army-Navy) specifications, this transistor offers robust switching and amplification capabilities with enhanced durability under extreme environmental conditions. It supports collector-emitter voltages up to 60V and collector currents up to 2A, making it suitable for medium power applications. With its rugged construction and compliance with MIL-STD-750 testing protocols, the device ensures dependable operation in harsh industrial environments. For sourcing and detailed technical support, visit IC Manufacturer.

JANTXV2N3501UB-Transistor Technical Specifications

JANTXV2N3501UB-Transistor Key Features

• High voltage and current handling: Supports up to 60V collector-emitter voltage and 2A collector current for medium power switching and amplification tasks.
• Wide operating temperature range: Reliable operation from -65??C to +200??C ensures suitability for extreme environments in aerospace and defense.
• JAN qualification: Meets strict military standards for quality and performance, providing proven reliability and long service life.
• High gain bandwidth product: 50 MHz gain bandwidth supports faster switching speeds enhancing overall circuit efficiency.

Typical Applications

• Military and aerospace electronic circuits requiring rugged, high-reliability switching and amplification under extreme environmental conditions.
• High temperature industrial controls where thermal stability and durability are critical for system uptime.
• Power amplifier stages in communication equipment operating in harsh or mission-critical environments.
• Defense-grade signal processing circuits demanding compliance with MIL-STD-750 for qualification and reliability.

JANTXV2N3501UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior environmental resilience and MIL-spec qualification, making it advantageous over standard commercial transistors. Its higher temperature tolerance, robust power dissipation, and proven reliability under rigorous testing conditions deliver consistent performance in demanding industrial and defense applications. The combination of high voltage, current capability, and gain bandwidth ensures efficient operation while maintaining durability, minimizing failure risks compared to non-qualified alternatives.

JANTXV2N3501UB-Transistor Brand Info

The JANTXV2N3501UB transistor is manufactured under military standards, often associated with trusted suppliers specializing in defense-grade semiconductor components. This product is typically provided by established semiconductor manufacturers who produce JAN (Joint Army-Navy) certified devices. These parts undergo stringent screening and burn-in processes to comply with MIL-STD-750 testing, guaranteeing high reliability and performance for aerospace and military applications. The TO-39 metal can package is a hallmark of durability and ease of integration into legacy and modern electronic assemblies.

FAQ

What does the JAN designation in the transistor model signify?

The JAN prefix indicates that the transistor meets Joint Army-Navy military standards. It signifies that the device has passed rigorous testing including temperature cycling, burn-in,