JANTXV2N3501UB/TR Overview
The JANTXV2N3501UB/TR is a high-performance N-channel MOSFET designed for robust switching and amplification applications in industrial and automotive environments. Featuring enhanced avalanche energy capability and low on-resistance, this device ensures efficient power management with reliable thermal performance. Its rugged construction supports high-voltage operation with a VDS rating of 350V, making it suitable for demanding power conversion and motor control systems. Sourced from a reputable IC Manufacturer, this MOSFET meets stringent quality and reliability standards essential for mission-critical deployments.
JANTXV2N3501UB/TR Key Features
- High Voltage Tolerance: Rated for 350V drain-source voltage, enabling use in high-voltage power circuits.
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall system efficiency and reducing heat dissipation.
- Enhanced Avalanche Energy Capability: Provides superior ruggedness under inductive load switching, enhancing device reliability.
- Fast Switching Performance: Supports high-frequency operation, suitable for modern DC-DC converters and inverters.
- Thermally Efficient Package: Ensures effective heat dissipation for stable operation under continuous load.
- Automotive Grade Compliance: Meets standards for automotive applications, ensuring durability in harsh environments.
- Optimized Gate Threshold Voltage: Facilitates easy drive from standard logic-level signals, simplifying integration.
JANTXV2N3501UB/TR Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain-Source Voltage (VDS) | 350 | V |
| Continuous Drain Current (ID) | 3.1 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 1.6 | ?? @ VGS=10V |
| Maximum Power Dissipation (PD) | 40 | W |
| Gate Charge (Qg) | 28 | nC |
| Total Gate-Drain Charge (Qgd) | 13 | nC |
| Operating Junction Temperature (Tj) | -55 to +150 | ??C |
JANTXV2N3501UB/TR Advantages vs Typical Alternatives
This MOSFET offers superior avalanche energy handling and a higher maximum drain-source voltage than many comparable devices, resulting in enhanced reliability under high-stress switching conditions. Its low on-resistance reduces conduction losses, improving power efficiency and thermal performance. The device’s automotive-grade qualification and robust packaging provide a competitive edge for demanding industrial applications where durability and precision are critical.
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Typical Applications
- Power Supply Converters: Ideal for high-voltage DC-DC converters requiring efficient switching and thermal stability in industrial systems.
- Motor Control Circuits: Suitable for controlling brushless DC motors in automotive and industrial automation due to rugged switching capability.
- Load Switches: Used in electronic load switching applications where low on-resistance and fast gate response are necessary.
- Lighting Ballasts and Inverters: Supports high-voltage, high-frequency operation in lighting and inverter circuits for energy-efficient solutions.
JANTXV2N3501UB/TR Brand Info
The JANTXV2N3501UB/TR is a product from a leading semiconductor manufacturer recognized for delivering high-quality power MOSFETs tailored for industrial and automotive markets. This product line is engineered to meet rigorous performance and reliability standards, ensuring consistent operation in harsh environments. The brand emphasizes robust design, advanced manufacturing processes, and comprehensive testing protocols to support long lifecycle applications.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage (VDS) of 350 volts, making it suitable for high-voltage switching applications in industrial and automotive circuits.
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How does the low on-resistance benefit system performance?
A lower RDS(on) reduces conduction losses during operation, which improves power efficiency and minimizes heat generation, enhancing overall system reliability and reducing cooling requirements.
Is this device suitable for automotive applications?
Yes, the MOSFET is qualified for automotive use, designed to withstand harsh environmental conditions and meet industry standards for reliability and performance in automotive systems.
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What are the thermal operating limits of this MOSFET?
The device operates reliably within a junction temperature range of -55??C to +150??C, allowing it to function effectively in a wide variety of temperature conditions commonly encountered in industrial settings.
Can this MOSFET be driven directly by logic-level signals?
The gate threshold voltage ranges between 2.0 and 4.0 volts, which facilitates control via standard logic-level drivers, simplifying integration into digital control circuits without requiring additional gate drive voltage.
