JANTXV2N3501U4-Transistor NPN High Voltage Switching Transistor in TO-220 Package

JANTXV2N3501U4-Transistor Overview

The JANTXV2N3501U4 is a high-performance bipolar junction transistor designed for robust switching and amplification in demanding industrial and military applications. Featuring a complementary silicon NPN structure, it offers reliable operation in high voltage and power environments. This transistor is optimized for ruggedness, ensuring stable performance under thermal and electrical stress, making it ideal for use in power amplifiers, driver stages, and interface circuits. Sourced from a trusted supplier, the device supports engineers and sourcing specialists seeking dependable semiconductor components with proven durability and consistent electrical characteristics. For detailed specifications and procurement, visit the IC Manufacturer.

JANTXV2N3501U4-Transistor Technical Specifications

JANTXV2N3501U4-Transistor Key Features

• High Collector Current Capacity: Supports continuous collector currents up to 3 A, enabling robust handling of medium-power loads.
• Wide Voltage Ratings: Collector-emitter voltage of 60 V and collector-base voltage of 80 V allow use in moderately high-voltage switching circuits.
• Reliable Thermal Performance: With a power dissipation rating of 30 W, the transistor maintains stable operation under elevated temperature conditions.
• Optimized Gain Characteristics: DC current gain of 40 minimum at 1 A collector current ensures strong amplification with predictable linearity.

Typical Applications

• Industrial power amplifiers requiring reliable medium-power transistor devices for signal amplification and switching under harsh environments.
• Driver stages in relay and solenoid control circuits where high current and voltage tolerance are essential for dependable operation.
• Interface circuits in automated industrial equipment that demand stable transistor performance over extended operating periods.
• Military and aerospace electronics benefiting from rugged transistor construction and the TO-39 package??s excellent thermal dissipation.

JANTXV2N3501U4-Transistor Advantages vs Typical Alternatives

This transistor offers a robust combination of voltage and current handling capabilities with a proven TO-39 metal can package, delivering superior thermal performance and reliability compared to plastic-encapsulated alternatives. Its high current gain and stable operation under thermal stress provide engineers with a dependable solution for medium-power amplification and switching in critical industrial and military systems, enhancing overall system durability and performance.

JANTXV2N3501U4-Transistor Brand Info

The JANTXV2N3501U4 is a military-grade transistor produced under stringent quality standards to meet demanding defense and industrial requirements. Manufactured by a reputable semiconductor supplier specializing in high-reliability discrete components, this transistor leverages decades of expertise in bipolar transistor technology. Its design aligns with JEDEC and MIL-STD specifications, ensuring compatibility and performance consistency in rugged environments. This product is part of a comprehensive portfolio supporting engineers in sourcing parts that combine legacy robustness with modern manufacturing quality.

FAQ

What is the maximum collector current rating of this transistor?

The transistor is rated for a continuous collector current of up to 3 Amperes, enabling it to handle moderate power loads safely in various industrial applications.

Which package type does this transistor use and why is it important?

This transistor is housed in a TO-39 metal can package, which provides excellent thermal conductivity and mechanical robustness, important for reliable operation under high power dissipation and harsh environmental conditions.

Can

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