JANTXV2N3501L-Transistor – High Voltage NPN Transistor in TO-220 Package by ON Semiconductor

JANTXV2N3501L-Transistor Overview

The JANTXV2N3501L is a high-reliability NPN silicon transistor designed for demanding military and aerospace applications. It features robust electrical characteristics, including a high voltage rating and stable gain, to ensure consistent performance in harsh environments. Rated for operation under JAN (Joint Army-Navy) standards, this transistor offers enhanced ruggedness, making it ideal for critical industrial and defense electronics. With excellent power dissipation and switching capabilities, it supports efficient signal amplification and control. Engineers and sourcing specialists will find this transistor a dependable component for high-reliability system designs. For detailed product sourcing and support, visit IC Manufacturer.

JANTXV2N3501L-Transistor Technical Specifications

JANTXV2N3501L-Transistor Key Features

• High voltage rating: Supports up to 350 V collector-emitter voltage, enabling use in high-voltage switching and amplification circuits.
• Robust power dissipation: With a maximum power rating of 125 W, it handles significant power loads, reducing thermal failure risk in demanding environments.
• Wide operating temperature range: Certified for operation from -65??C to +200??C, ensuring functionality in extreme thermal conditions common in military and aerospace systems.
• Reliable gain stability: Provides consistent DC current gain across operating conditions, critical for precision analog signal applications.

Typical Applications

• High-reliability amplification in military communication systems, where stable gain and ruggedness are essential for mission-critical signal integrity.
• Power switching in aerospace control units requiring durable components to withstand temperature extremes and mechanical stress.
• Industrial automation circuits demanding robust high-voltage transistors for reliable motor control and power regulation.
• High-power audio amplification stages in professional equipment that require linear gain and thermal resilience.

JANTXV2N3501L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and power handling compared to standard commercial transistors, making it advantageous for high-stress environments. Its JAN qualification ensures enhanced reliability and ruggedness, surpassing typical alternatives in sensitivity to temperature variations and mechanical shock. The stable gain and wide operating temperature range improve accuracy and longevity, critical for aerospace and military-grade electronics where failure is not an option.

JANTXV2N3501L-Transistor Brand Info

The JANTXV2N3501L is produced under stringent Joint Army-Navy (JAN) standards, typically manufactured by established semiconductor suppliers specializing in military-grade components. These transistors are designed to meet strict specifications for durability, electrical performance, and environmental resistance. The product is widely recognized in defense and aerospace sectors for its compliant quality and reliability. Often sourced from trusted manufacturers with a history of supplying ruggedized discrete semiconductors, this device supports long lifecycle and dependable field performance.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage for this transistor is 350 volts, allowing it to operate safely in high-voltage circuits without breakdown or degradation.

Can this transistor handle high power dissipation in industrial applications?

Yes, it can dissipate up to 125 watts of power, making it well-suited for industrial environments where significant electrical loads and thermal management are required.

What temperature range is this transistor rated

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