JANTXV2N3501-Transistor – NPN Power Transistor in TO-3 Package by NXP Semiconductors

JANTXV2N3501-Transistor Overview

The JANTXV2N3501 is a high-reliability silicon NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. Its robust construction ensures stable operation in harsh environments, making it suitable for use in precision amplification and switching circuits. This transistor supports a collector-emitter voltage up to 60V and a collector current of 8A, providing a reliable solution for power amplification and control functions. Engineered to meet JANTXV quality standards, it guarantees extended device longevity and consistent electrical characteristics. For precise industrial applications, the JANTXV2N3501 offers dependable performance backed by IC Manufacturer certifications.

JANTXV2N3501-Transistor Technical Specifications

JANTXV2N3501-Transistor Key Features

• High Collector Current Capacity: Supports up to 8A, enabling robust power handling in demanding amplifier and switching applications.
• Wide Operating Temperature Range: Operates reliably between ?65??C and +200??C, ensuring stable performance in extreme environmental conditions.
• Military-Grade JANTXV Qualification: Guarantees stringent quality, reliability, and longevity, essential for aerospace and defense electronics.
• TO-3 Metal Can Package: Provides excellent thermal dissipation and mechanical strength, enhancing device durability and heat management.

Typical Applications

• Power amplification stages in military communication equipment, where dependable high current and voltage handling are critical for signal integrity.
• Switching regulators and power supply circuits requiring rugged transistors capable of handling high power dissipation.
• Amplifier circuits in aerospace instrumentation that demand stable operation over wide temperature ranges.
• Industrial control systems where reliable transistor switching under harsh environmental conditions is necessary.

JANTXV2N3501-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and robustness compared to standard commercial-grade devices due to its JANTXV military qualification. Its extended temperature range and high current capacity provide enhanced operational stability in critical systems. The TO-3 package ensures better thermal management than plastic encapsulated transistors, reducing failure rates in high-power applications. These attributes make it an advantageous choice for engineers seeking durable and precise transistor solutions in demanding industrial and defense environments.

JANTXV2N3501-Transistor Brand Info

The JANTXV2N3501 transistor is commonly supplied by established semiconductor manufacturers specializing in military-specification components. The JANTXV prefix denotes compliance with Joint Army-Navy Technical Exchange standards, reflecting rigorous testing and screening processes. These devices are typically produced under stringent quality control to meet defense and aerospace industry requirements. The JANTXV2N3501 is recognized for its dependable performance, assured by manufacturers that focus on high-reliability transistor production tailored for mission-critical applications.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is 8 amperes. This rating allows it to handle significant power loads, making it suitable for applications requiring robust current capacity such as power amplification and switching.

What temperature range can the JANTXV2N3501 safely operate within?

This transistor is rated to operate reliably from ?65??C up to +200??C, supporting use in extreme environmental conditions including aerospace and military applications where temperature extremes are common.

What package type does this transistor use and why is it important?

The device is housed in a TO-3 metal can package. This