JANTXV2N3500L-Transistor NPN Power Transistor in TO-3 Package by JAN

  • This transistor amplifies electrical signals, enabling efficient switching and control in various circuits.
  • It features a high voltage rating, ensuring stable operation in demanding power applications.
  • The compact TO-39 metal can package offers robust protection while saving valuable board space.
  • Ideal for use in audio amplifiers or switching regulators, it enhances performance and reliability.
  • Manufactured under strict quality standards, this component ensures consistent operation over time.
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JANTXV2N3500L-Transistor Overview

The JANTXV2N3500L is a military-grade NPN bipolar junction transistor designed for high-reliability applications. Built to meet stringent JAN (Joint Army-Navy) specifications, this transistor ensures robust operation in demanding environments, including aerospace and defense systems. It offers a collector-emitter voltage rating of 350V and a collector current of up to 1A, making it suitable for medium power amplification and switching tasks. The device??s low noise figure and stable gain characteristics enhance signal integrity in analog circuits. Sourced from a trusted IC Manufacturer, it provides consistent performance under harsh conditions, ideal for engineers and sourcing specialists focused on durable semiconductor solutions.

JANTXV2N3500L-Transistor Technical Specifications

Parameter Specification Unit
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (Vceo) 350 V
Collector Current (Ic) 1 A
Gain Bandwidth Product (fT) 50 MHz
DC Current Gain (hFE) 40 to 160
Collector-Base Voltage (Vcbo) 400 V
Power Dissipation (Pc) 625 (at 25??C) mW
Operating Temperature Range -55 to +125 ??C

JANTXV2N3500L-Transistor Key Features

  • High voltage rating: Supports collector-emitter voltages up to 350V, enabling reliable operation in high-voltage circuits.
  • Military-grade reliability: Complies with JAN standards, ensuring durability and consistent performance in extreme environments.
  • Wide operating temperature range: Functions reliably from -55??C to +125??C, suitable for aerospace and defense applications.
  • Stable gain characteristics: Offers consistent DC current gain between 40 and 160, providing predictable amplification.
  • Low noise figure: Enhances signal integrity in sensitive analog and RF circuits.

Typical Applications

  • High-reliability amplifier stages in military and aerospace communication devices, where stable gain and noise performance are essential.
  • Switching elements in power control circuits requiring robust voltage handling and thermal endurance.
  • Signal processing in instrumentation systems operating under harsh environmental conditions.
  • High-voltage driver circuits in defense electronics that demand long-term reliability and ruggedness.

JANTXV2N3500L-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its strict compliance with JAN military standards, offering enhanced reliability and ruggedness compared to commercial-grade alternatives. Its high voltage and current ratings combined with a broad temperature tolerance provide superior operational stability. Such characteristics reduce failure rates and maintenance needs, making it ideal for critical aerospace and defense electronics where performance consistency and durability are paramount.

JANTXV2N3500L-Transistor Brand Info

The JANTXV2N3500L transistor is manufactured under the JAN (Joint Army-Navy) specification, a certification standard that ensures components meet rigorous military-grade quality and reliability requirements. This device is typically produced by established semiconductor manufacturers specializing in high-reliability components for defense and aerospace sectors. The JAN designation guarantees that the transistor undergoes extensive screening, burn-in, and environmental testing, providing engineers with confidence in its durability and performance in mission-critical applications.

FAQ

What is the maximum voltage rating of the JANTXV2N3500L transistor?

The transistor supports a maximum collector-emitter voltage (Vceo) of 350 volts. This high-voltage rating enables reliable operation in circuits requiring robust voltage handling capabilities.

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