JANTXV2N3500-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

JANTXV2N3500-Transistor Overview

The JANTXV2N3500 is a high-power NPN bipolar junction transistor designed for demanding industrial and military applications. This transistor offers robust electrical performance with a collector-emitter voltage rating of 350 V and a continuous collector current of 2 A. Its superior switching speed and high gain make it optimal for amplifier and switching circuits requiring reliable operation under harsh conditions. The device is housed in a durable metal can package, ensuring enhanced thermal dissipation and mechanical stability. Engineers and sourcing specialists can rely on this transistor for precision control in power regulation, amplification, and switching tasks. For detailed sourcing and technical data, visit IC Manufacturer.

JANTXV2N3500-Transistor Technical Specifications

JANTXV2N3500-Transistor Key Features

• High voltage blocking capability: With a collector-emitter voltage rating of 350 V, it supports applications requiring high-voltage switching and amplification.
• Robust current handling: The continuous collector current of 2 A enables the device to operate effectively in power control circuits without thermal stress.
• Wide DC gain range: Gain variability from 40 to 320 ensures flexibility across different amplifier configurations, improving signal fidelity.
• Hermetically sealed metal can package: Enhances reliability and thermal management, making it suitable for harsh environments and long operational lifetimes.

Typical Applications

• High-voltage switching circuits often found in industrial power supplies and motor control systems, where reliable transistor operation under elevated voltages is critical.
• Signal amplification in audio and RF systems requiring stable gain and low distortion.
• Military and aerospace electronics that demand rugged components with superior environmental resistance and longevity.
• Power regulation modules in industrial automation, where efficient heat dissipation and consistent current handling improve overall system performance.

JANTXV2N3500-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage tolerance and robust current capacity compared to standard BJTs. Its hermetically sealed metal can package delivers enhanced thermal conductivity and environmental protection, increasing reliability in industrial and military use cases. The wide DC gain range also provides greater design flexibility, while its 30 W power dissipation rating supports efficient heat management, making it a preferred choice for engineers seeking durable and precise transistor performance.

JANTXV2N3500-Transistor Brand Info

The JANTXV2N3500 is a military-grade transistor variant commonly produced under stringent quality standards to meet MIL-PRF-19500 specifications. This device is often sourced from established manufacturers specializing in high-reliability semiconductors for aerospace, defense, and industrial markets. The “JAN” prefix indicates compliance with Joint Army-Navy (JAN) requirements, ensuring the transistor??s suitability for high-reliability systems where performance consistency and ruggedness are mandatory. This product is well-regarded for its proven track record in critical applications demanding long-term stability and enhanced environmental resilience.

FAQ

What is the maximum voltage rating of this transistor?

The transistor has