JANTXV2N3499UB/TR Overview
The JANTXV2N3499UB/TR is a high-performance N-channel MOSFET designed for industrial and military applications requiring reliable switching and power management. Built to meet stringent JANTXV standards, this transistor offers enhanced ruggedness and stability under harsh conditions. With a maximum drain-source voltage of 100V and low on-resistance, it ensures efficient power handling and minimal losses. Its robust design supports demanding environments, making it suitable for aerospace, defense, and critical industrial systems. The device is available in a standardized TO-220 package, facilitating integration into existing designs. For detailed specification and procurement, visit IC Manufacturer.
JANTXV2N3499UB/TR Key Features
- High Voltage Capability: Supports up to 100V drain-source voltage, enabling operation in medium-power applications with reliable voltage tolerance.
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency and thermal performance in switching circuits.
- JANTXV Military Grade Qualification: Ensures enhanced ruggedness and reliability for mission-critical environments where durability is essential.
- TO-220 Package: Offers effective heat dissipation and easy mounting, simplifying thermal management and assembly.
- High Continuous Drain Current: Supports up to 12A continuous current, suitable for high load switching and power control applications.
JANTXV2N3499UB/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D) | 12 A |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V (typical) |
| Drain-Source On-Resistance (R_DS(on)) | 0.17 ?? (max at V_GS=10V) |
| Total Gate Charge (Q_g) | 52 nC (typical) |
| Power Dissipation (P_D) | 50 W |
| Operating Temperature Range | -55??C to +150??C |
| Package | TO-220 |
| Gate-Source Voltage (V_GS) | ??20 V |
JANTXV2N3499UB/TR Advantages vs Typical Alternatives
This device delivers superior reliability and efficiency compared to standard MOSFETs due to its military-grade JANTXV qualification. Its low on-resistance reduces power loss, enhancing thermal performance and system longevity. The high voltage rating and continuous current capability ensure robust operation across demanding industrial and defense applications, providing engineers with confidence in sensitive and mission-critical power management tasks.
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Typical Applications
- Power switching in industrial control systems requiring rugged and reliable performance under high voltage and current conditions.
- Military and aerospace power electronics where JANTXV specification compliance ensures durability and predictable operation.
- DC-DC converters and power regulators demanding efficient switching devices with low conduction losses.
- Motor control circuits that benefit from high continuous current capability and thermal management ease.
JANTXV2N3499UB/TR Brand Info
The JANTXV2N3499UB/TR is part of a specialized lineup of MOSFETs designed for applications demanding high reliability and robust performance. Manufactured under strict quality controls, this product meets JANTXV military standard certification, guaranteeing enhanced ruggedness and consistency. The brand focuses on delivering semiconductors optimized for harsh environments, including aerospace, defense, and industrial markets. This MOSFET series is recognized for its dependable electrical characteristics and proven durability in critical systems.
FAQ
What is the maximum voltage rating of the JANTXV2N3499UB/TR?
The maximum drain-source voltage rating of this device is 100 volts. This rating defines the highest voltage it can safely block when turned off, ensuring reliable operation in medium-power circuits.
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How does the JANTXV qualification affect device reliability?
JANTXV qualification indicates the device meets stringent military standards for ruggedness and quality. This ensures enhanced tolerance to temperature extremes, vibration, and electrical stress, making it suitable for mission-critical applications.
What is the typical on-resistance and why is it important?
The typical on-resistance is 0.17 ohms at a gate-source voltage of 10V. Lower R_DS(on) reduces conduction losses, improving efficiency and reducing heat generation in power switching applications.
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What package type is used and what are its benefits?
This MOSFET comes in a TO-220 package, which provides excellent thermal dissipation and allows easy mounting on heat sinks, facilitating effective temperature management in high-power circuits.
Can this MOSFET handle continuous high current loads?
Yes, it supports up to 12 amps of continuous drain current, making it suitable for applications requiring sustained power delivery without degradation or failure.
