JANTXV2N3499L-Transistor NPN Power Transistor TO-3 Package by ON Semiconductor

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its voltage and current ratings ensure stable operation under varying electrical loads.
  • The compact package reduces board space, aiding in dense circuit designs and assembly.
  • Ideal for signal amplification in communication devices, improving overall system performance.
  • Manufactured with quality controls to deliver consistent reliability and long-term durability.
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JANTXV2N3499L-Transistor Overview

The JANTXV2N3499L is a high-performance NPN bipolar junction transistor designed for demanding industrial and military applications requiring stringent reliability and robustness. This transistor operates with a collector-emitter voltage of up to 100V and a collector current of 10A, making it well-suited for power amplification and switching tasks. Its hermetically sealed metal can package ensures long-term durability in harsh environments. The device is characterized by low saturation voltage and high gain, optimizing efficiency in power control circuits. Engineers and sourcing specialists can rely on this transistor from IC Manufacturer for critical applications demanding precision and ruggedness.

JANTXV2N3499L-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Power Dissipation (PD) 50 W
DC Current Gain (hFE) 30 min at IC=5A Unitless
Transition Frequency (fT) 8 MHz
Operating Junction Temperature (TJ) -65 to +200 ??C
Package Type Hermetically sealed metal can (TO-39)

JANTXV2N3499L-Transistor Key Features

  • High voltage and current handling: Supports up to 100V collector-emitter voltage and 10A collector current, enabling robust power switching and amplification in industrial circuits.
  • Hermetically sealed metal can packaging: Provides excellent environmental protection and reliability, critical for military and aerospace applications.
  • Low saturation voltage: Enhances efficiency by reducing power losses during switching, which helps in thermal management and system longevity.
  • Wide operating temperature range: Functions reliably from -65??C to +200??C, ensuring stable performance in extreme environments.

Typical Applications

  • Power amplification circuits in industrial control systems requiring high current and voltage capabilities combined with ruggedness.
  • Switching applications in aerospace and military electronics, where reliability under harsh environmental conditions is paramount.
  • High-reliability power regulators and motor control circuits that benefit from low saturation voltage and robust packaging.
  • General-purpose amplification in demanding environments such as automotive and heavy machinery controls.

JANTXV2N3499L-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and robustness compared to typical commercial-grade devices due to its hermetically sealed metal can package and extended temperature range. Its ability to handle high collector currents and voltages with low saturation voltage improves efficiency and reduces thermal stress. This combination of ruggedness and electrical performance makes it ideal for critical industrial and military applications where failure is not an option.

JANTXV2N3499L-Transistor Brand Info

The JANTXV2N3499L is a JEDEC registered transistor type commonly manufactured by established semiconductor suppliers specializing in military and aerospace-grade components. The “JAN” prefix indicates compliance with Joint Army-Navy standards, ensuring high reliability and quality control. This transistor is part of a family of devices designed to meet stringent MIL-SPEC requirements, making it a trusted choice in defense and

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