JANTXV2N3485A-Transistor Overview
The JANTXV2N3485A is a high-performance N-channel enhancement mode field-effect transistor (FET) designed for robust switching and amplification applications in industrial and military-grade electronics. Constructed to meet stringent JAN (Joint Army-Navy) standards, this transistor offers enhanced reliability and stability under harsh environmental conditions. Its silicon planar MOSFET structure provides low on-resistance and fast switching capabilities, making it suitable for power management, signal processing, and general-purpose amplification. Engineers and sourcing specialists will benefit from its rugged design and consistent electrical characteristics, ensuring dependable operation in critical applications. For detailed technical support, visit IC Manufacturer.
JANTXV2N3485A-Transistor Key Features
- High voltage rating: Supports up to 60V drain-source voltage, enabling use in medium power circuits with high voltage requirements.
- Low gate threshold voltage: Operates with a maximum threshold voltage of 2.5V, ensuring efficient switching and low drive voltage requirements.
- Low on-resistance: Provides minimal conduction losses, improving overall circuit efficiency and thermal performance.
- JAN qualification: Built to meet military standards, guaranteeing enhanced reliability and extended lifecycle in demanding environments.
JANTXV2N3485A-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ??20 | V |
| Continuous Drain Current (ID) | 1.5 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 2.5 | V |
| Drain-Source On-Resistance (RDS(on)) | 1.6 | ?? (max) |
| Total Gate Charge (Qg) | 14 | nC |
| Operating Temperature Range | -55 to +125 | ??C |
| Package Type | TO-18 Metal Can | – |
JANTXV2N3485A-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and performance under extreme temperature and voltage conditions compared to standard commercial MOSFETs. Its low gate threshold voltage and reduced on-resistance enable efficient switching with minimal power loss, enhancing circuit sensitivity and accuracy. The military-grade JAN certification ensures robustness and long-term stability, making it an ideal choice for critical industrial and defense applications where failure is not an option.
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Typical Applications
- Switching regulators and power management circuits requiring stable operation in harsh environments, benefiting from low conduction losses and fast switching speeds.
- Signal amplification in industrial control systems where precision and reliability are essential.
- Military and aerospace electronic equipment demanding components qualified for extended temperature and mechanical stress ranges.
- General-purpose switching and amplification tasks in embedded systems designed for rugged operational conditions.
JANTXV2N3485A-Transistor Brand Info
The JANTXV2N3485A is a premium-grade transistor manufactured under strict quality controls aligned with military standards. The JAN designation signifies rigorous testing for environmental resilience, including temperature cycling, vibration, and moisture resistance. This product line is known for combining proven silicon MOSFET technology with enhanced durability, making it a trusted component for engineers designing high-reliability circuits. Its metal can TO-18 package ensures excellent thermal dissipation and mechanical protection, reinforcing its suitability for demanding industrial and defense applications.
FAQ
What is the maximum operating voltage of this transistor?
The maximum drain-to-source voltage rating is 60 volts, allowing the transistor to operate safely in circuits requiring medium voltage handling capabilities without compromising reliability.
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How does the gate threshold voltage affect device performance?
The gate threshold voltage ranges from 1.0 to 2.5 volts, which defines the minimum voltage needed to activate the transistor. A low threshold voltage ensures efficient switching with reduced gate drive power, improving overall circuit efficiency.
Is this transistor suitable for high-temperature environments?
Yes, the device is rated for operation between -55??C and +125??C, making it suitable for applications where temperature extremes are common, such as military and industrial systems.
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What package type is used for this transistor and why is it important?
This transistor uses a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection. This package type is critical for maintaining device stability and longevity under harsh operating conditions.
Can this transistor be used in power switching applications?
Absolutely. Its low on-resistance and high current rating of 1.5 A make it well-suited for power switching applications, especially where efficiency and reliability are paramount.
