JANTXV2N3468L-Transistor NPN Power Transistor in TO-3 Package ?C JAN Military Grade

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its voltage rating supports stable operation under varying electrical conditions, ensuring consistent performance.
  • The compact package design allows for board-space savings in densely populated electronic assemblies.
  • Ideal for use in power regulation modules, it enhances device responsiveness and energy management.
  • Manufactured to meet strict quality standards, it offers dependable operation over extended periods.
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JANTXV2N3468L-Transistor Overview

The JANTXV2N3468L transistor is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding industrial and military applications. It offers a collector-emitter voltage of up to 100V and a collector current rating of 10A, making it suitable for power amplification and switching tasks. This transistor features a rugged construction compliant with JAN (Joint Army-Navy) specifications, ensuring enhanced reliability and performance under harsh conditions. Ideal for high-speed switching and linear amplification, this device is manufactured by IC Manufacturer and supports engineers and sourcing specialists seeking durable, high-power transistor solutions.

JANTXV2N3468L-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A (continuous)
Power Dissipation (PD) 125 W
Transition Frequency (fT) 15 MHz
DC Current Gain (hFE) 20 (minimum)
Junction Temperature (TJ) +200 ??C max
Package TO-3 Metal Can

JANTXV2N3468L-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltage up to 100 V, enabling use in high-voltage switching and amplification circuits.
  • Robust Current Handling: Rated for continuous collector current of 10 A, suitable for power control applications requiring substantial load drive.
  • Rugged Military-Grade Construction: Compliant with JAN specifications, ensuring superior reliability and performance in harsh environments.
  • High Power Dissipation: Dissipates up to 125 W, allowing efficient thermal management for sustained operation in demanding systems.
  • Wide Operating Temperature Range: Operates up to 200 ??C junction temperature, ideal for industrial and aerospace applications with extreme thermal conditions.
  • Low Transition Frequency: Provides adequate gain at 15 MHz, balancing switching speed with power handling for many analog and digital applications.
  • TO-3 Metal Can Package: Enhances thermal conductivity and mechanical durability, simplifying mounting and heat sinking in system designs.

Typical Applications

  • Power Amplification: Used in high-power linear amplifier circuits for audio or RF applications where voltage and current demands are high.
  • Switching Circuits: Suitable for industrial motor controls and power switching where fast and reliable transistor switching is critical.
  • Military and Aerospace Systems: Its rugged JAN-qualified build supports use in avionics and defense electronics requiring dependable performance.
  • Voltage Regulators and DC-DC Converters: Efficiently handles voltage regulation tasks in power supply modules and converters.

JANTXV2N3468L-Transistor Advantages vs Typical Alternatives

This transistor stands out with its high voltage and current ratings combined with military-grade reliability, making it more robust than many commercial alternatives. Its ability to handle 125 W power dissipation and operate at extreme temperatures offers superior durability and efficiency. The rugged TO-3 package further enhances thermal management and mechanical stability, providing advantages in harsh industrial and aerospace environments where long-term reliability and performance consistency are critical.

JANTXV2N3468L-Transistor Brand Info

The JANTXV2N3468L is produced under stringent military standards,

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