JANTXV2N3467L-Transistor Overview
The JANTXV2N3467L is a high-performance NPN silicon transistor designed for demanding industrial and military applications. It features robust voltage and current handling capabilities, making it ideal for switching and amplification tasks in rugged environments. This transistor adheres to JANTX/ JANTXV military standards, ensuring enhanced reliability and extended operational life under harsh conditions. With a maximum collector-emitter voltage of 60V and collector current up to 10A, it supports high-power circuits and precise control applications. Sourcing this device from a trusted IC Manufacturer guarantees consistent quality and compliance with stringent quality certifications.
JANTXV2N3467L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 10 A (continuous) |
| Power Dissipation (Ptot) | 115 W |
| Gain Bandwidth Product (fT) | 3 MHz (typical) |
| DC Current Gain (hFE) | 40 to 160 (depending on operating point) |
| Operating Temperature Range | -65??C to +200??C (JANTXV military grade) |
| Package Type | TO-3 Metal Can |
JANTXV2N3467L-Transistor Key Features
- High current capacity: Supports collector currents up to 10A, enabling efficient power amplification in demanding circuits.
- Military-grade reliability: Designed and tested to JANTXV standards, ensuring dependable operation in extreme temperatures and harsh environments.
- Robust voltage handling: Withstands collector-emitter voltages up to 60V, suitable for medium-power switching and control applications.
- Thermally resilient TO-3 package: Provides excellent heat dissipation, improving device longevity and performance stability under continuous load.
Typical Applications
- Power amplification stages in aerospace and military communication systems, where reliability and stable gain are critical.
- Switching regulators and power control circuits requiring high current and voltage tolerance.
- Industrial motor controls demanding rugged transistors capable of handling inductive loads and high surge currents.
- Test and measurement equipment operating in harsh environments, leveraging the device??s temperature resilience and consistent electrical characteristics.
JANTXV2N3467L-Transistor Advantages vs Typical Alternatives
This transistor provides superior durability and performance compared to standard commercial counterparts due to its military-grade certification and TO-3 packaging. Its high collector current and voltage ratings enable efficient power handling, while its robust thermal design ensures long-term reliability. These attributes make it a preferred choice for engineers requiring precise control and sustained operation in challenging industrial and defense environments.
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JANTXV2N3467L-Transistor Brand Info
The JANTXV2N3467L transistor is a military-spec variant of the popular 2N3467 device, produced under strict quality controls by manufacturers specializing in high-reliability semiconductors. The JANTX and JANTXV prefixes indicate compliance with MIL-PRF-19500 standards, which certifies the device for aerospace and defense applications. Typically sourced from established semiconductor manufacturers with dedicated military product lines, this transistor is part of a legacy series known for ruggedness and dependable performance under extreme conditions.
FAQ
What does the JANTXV rating signify for this transistor?
The JANTXV rating indicates that this transistor meets the JANTXV military specification, which includes rigorous testing for temperature extremes, mechanical shock, and electrical performance. This ensures the device can operate reliably in critical aerospace and defense applications.
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Can this transistor be used in high-frequency circuits?
While the transistor has a gain bandwidth product around 3 MHz, it is better suited for medium-frequency and power amplification rather than high-frequency RF applications. Its primary strength lies in power handling and robustness.
