JANTXV2N3440U4-Transistor High-Voltage NPN Transistor in TO-3 Package by ON Semiconductor

  • This transistor provides efficient switching and amplification, enhancing circuit performance and control.
  • With its specified voltage rating, it ensures stable operation under varying electrical loads.
  • The compact package reduces board space, facilitating dense and lightweight electronic designs.
  • Ideal for signal processing in communication devices, improving response and signal clarity.
  • Manufactured to meet rigorous quality standards, ensuring long-term reliability in diverse environments.
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JANTXV2N3440U4-Transistor Overview

The JANTXV2N3440U4 is a high-performance bipolar junction transistor (BJT) designed for demanding switching and amplification applications in industrial electronics. Built to meet stringent military specifications, this transistor offers robust electrical characteristics, including a collector-emitter voltage rating of 300V and a collector current capacity of 10A. Its enhanced ruggedness and reliability make it suitable for power regulation, motor control, and other high-current circuits where durability and performance are critical. Engineers and sourcing specialists trust this component for stable operation under harsh conditions. For comprehensive semiconductor solutions, visit IC Manufacturer.

JANTXV2N3440U4-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 300 V
Collector Current (IC) 10 A
Power Dissipation (PD) 125 W
DC Current Gain (hFE) 20 to 70 ?C
Transition Frequency (fT) 3 MHz
Collector-Base Voltage (VCBO) 400 V
Emitter-Base Voltage (VEBO) 5 V
Operating Junction Temperature -65 to +200 ??C

JANTXV2N3440U4-Transistor Key Features

  • High voltage rating up to 300V: Enables reliable operation in high-voltage power switching circuits.
  • Collector current capacity of 10A: Supports high-current loads, ensuring robust power amplification and switching.
  • Wide operating temperature range: Suitable for harsh industrial environments, maintaining performance from -65??C to +200??C.
  • Military-grade quality: Designed and tested to comply with stringent reliability standards for dependable long-term use.

Typical Applications

  • Power supply regulation and control circuits requiring high voltage and current handling capabilities with enhanced reliability.
  • Industrial motor control applications where durable switching transistors are essential for managing load demands.
  • Audio amplification stages in rugged environments benefiting from stable gain and thermal performance.
  • High power switching in automotive and aerospace electronics demanding military-spec quality and extended temperature operation.

JANTXV2N3440U4-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage and current ratings with a broad temperature range, outperforming typical BJTs in power switching and amplification tasks. Its military-grade construction ensures enhanced reliability and longevity compared to standard commercial-grade transistors, making it ideal for critical industrial and aerospace applications where failure is not an option.

JANTXV2N3440U4-Transistor Brand Info

The JANTXV2N3440U4 is a product line typically associated with manufacturers specializing in military-standard bipolar junction transistors. The ??JANTX?? prefix indicates compliance with Joint Army-Navy (JAN) specifications, ensuring rigorous quality and reliability testing. These transistors are produced by established semiconductor companies known for delivering components that meet strict MIL-STD requirements for defense and aerospace sectors. This ensures the device??s suitability for high-reliability applications requiring consistent electrical performance and environmental resilience.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 10 amperes, allowing it to handle significant load currents in power switching and amplification circuits without degradation.

Can this transistor operate in extreme temperature environments?

Yes, it is designed to operate reliably within

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