JANTXV2N3439-Transistor High-Power NPN Transistor in TO-3 Package ?C JAN Military Grade

  • This transistor amplifies or switches electronic signals, enabling efficient circuit control and signal processing.
  • A key parameter ensures stable operation under varying electrical conditions, enhancing overall device performance.
  • The compact package design reduces board space, facilitating integration into dense electronic assemblies.
  • Ideal for use in power regulation circuits, it helps maintain consistent voltage and current levels in devices.
  • Manufactured with quality standards to ensure long-term reliability and consistent functionality in demanding environments.
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JANTXV2N3439-Transistor Overview

The JANTXV2N3439 is a high-performance NPN bipolar junction transistor designed for demanding military and aerospace applications. Constructed to meet stringent JAN (Joint Army-Navy) standards, this transistor delivers reliable operation in harsh environments with enhanced thermal stability and robust electrical characteristics. Its rugged design ensures consistent switching and amplification performance, making it an ideal choice for defense systems, communication devices, and industrial electronics requiring high gain and low noise. Manufactured to exacting quality controls, the device offers engineers and sourcing specialists a dependable component from a trusted IC Manufacturer.

JANTXV2N3439-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)160 V
Collector Current (IC)8 A (continuous)
Power Dissipation (PD)150 W (max)
DC Current Gain (hFE)20 to 70 (at IC=4 A, VCE=4 V)
Transition Frequency (fT)5 MHz (typical)
Junction Temperature (TJ)?65??C to +200??C
Package TypeTO-3 Metal Can
Base-Emitter Voltage (VBE)2.0 V (max)

JANTXV2N3439-Transistor Key Features

  • High voltage and current handling: Supports up to 160 V and 8 A continuous current, enabling robust power amplification in demanding circuits.
  • Wide operating temperature range: Rated for junction temperatures up to 200??C, ensuring stable performance in extreme thermal environments.
  • Low noise figure: Optimized for low signal distortion, critical for precision analog and RF applications.
  • Military-grade reliability: Meets JAN specifications for ruggedness and long-term operational stability under harsh conditions.

Typical Applications

  • Power amplification stages in military communication radios, where high gain and dependable operation are essential in variable environmental conditions.
  • Switching elements in aerospace control systems requiring rugged components with high voltage and current tolerance.
  • Industrial motor drive circuits that demand reliable high-power transistors capable of sustained operation under thermal stress.
  • High-fidelity audio amplification for specialized defense or avionics equipment where distortion must be minimized.

JANTXV2N3439-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to standard commercial devices, enabling enhanced reliability and longevity in critical systems. Its military-grade construction ensures stable gain and low noise over wide temperature ranges, outperforming typical alternatives in harsh environments. These advantages make it the preferred choice for engineers requiring a robust, precise, and durable transistor for defense and aerospace applications.

JANTXV2N3439-Transistor Brand Info

The JANTXV2N3439 is a military-grade transistor produced under strict Joint Army-Navy (JAN) standards, widely recognized for its ruggedness and reliability. Manufactured by established semiconductor suppliers specializing in defense components, this device aligns with industry requirements for high-quality, long-life electronic parts. The JAN designation guarantees compliance with rigorous testing protocols, making the transistor a trusted component in military and aerospace electronics. Its TO-3 package and tested electrical parameters reflect a heritage of proven performance in demanding environments.

FAQ

What are the key electrical limits for safe operation of this transistor?

The transistor supports a maximum collector-emitter voltage of 160 V and a continuous collector current of 8 A. Power dissipation is rated at 150 W, with a maximum junction temperature of 200??C. Staying within these limits ensures reliable and safe operation.

Is this transistor suitable for high-frequency applications?

This device has a transition frequency of approximately 5 MHz, making it suitable for medium-frequency applications such as RF amplification in communication systems, though it is not optimized for

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