JANTXV2N3057A-Transistor Overview
The JANTXV2N3057A is a high-reliability, bipolar NPN transistor designed for industrial and military-grade applications. It offers robust performance with enhanced voltage and power handling capabilities, making it suitable for switching and amplification tasks in demanding environments. This transistor features a high collector-emitter voltage rating and a significant collector current capacity, ensuring stable operation under stringent conditions. With its rugged design and compliance with JAN (Joint Army-Navy) standards, this component is ideal for engineers requiring dependable, long-lasting transistor solutions. Available through IC Manufacturer, it supports critical applications where precision and durability are paramount.
JANTXV2N3057A-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Device Type | NPN Bipolar Junction Transistor | |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 15 | A |
| Power Dissipation (PD) | 115 | W |
| DC Current Gain (hFE) | 20 to 70 | |
| Transition Frequency (fT) | 2.5 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
| Package Type | TO-3 Metal Can |
JANTXV2N3057A-Transistor Key Features
- High Voltage Handling: Supports collector-emitter voltages up to 60V, enabling reliable switching in power circuits.
- Robust Collector Current Capacity: Capable of handling up to 15A, suitable for high-current load applications without thermal degradation.
- Wide Operating Temperature Range: Rated from -65??C to +200??C, ensuring performance in extreme environments typical of military and aerospace uses.
- High Power Dissipation: With 115W maximum power dissipation, it supports efficient thermal management in demanding industrial setups.
- JAN Specification Compliance: Meets stringent military-grade standards for reliability and quality, reducing failure rates in critical systems.
- TO-3 Package: Metal can design offers excellent heat dissipation and mechanical durability, improving device longevity.
- Moderate Gain Bandwidth: Transition frequency of 2.5 MHz balances switching speed and gain for versatile analog and switching roles.
Typical Applications
- Power Amplification: Used in high-power audio and RF amplifiers requiring stable gain and voltage ratings in industrial equipment.
- Switching Circuits: Suitable for load switching in power supplies, motor control, and relay driver circuits where high current capacity is essential.
- Military and Aerospace Electronics: Designed to operate reliably under harsh environmental conditions and temperature extremes.
- Industrial Control Systems: Enables robust control of actuators and power stages in automated manufacturing and process control.
JANTXV2N3057A-Transistor Advantages vs Typical Alternatives
This transistor provides superior reliability and power handling compared to standard commercial-grade devices. Its high collector current and voltage ratings, combined with compliance to military JAN standards, ensure enhanced durability and performance in critical applications. The TO-3 package improves thermal dissipation, thus increasing operational stability under continuous high load. These factors make it a preferred choice for engineers seeking robustness, precision, and long-term reliability over typical alternatives.
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JANTXV2N3057A-Transistor Brand Info
The JANTXV2N3057A is produced under strict military specifications originally standardized by the Joint Army-Navy (JAN) program, reflecting high-quality manufacturing and testing processes. Typically offered by manufacturers specializing in military-grade
