JANTXV2N3019-Transistor Overview
The JANTXV2N3019 is a rugged, high-voltage NPN bipolar junction transistor designed for demanding industrial and aerospace applications. It features a collector-base voltage rating of 100V and a collector current capacity up to 8A, enabling robust switching and amplification tasks. Known for its enhanced reliability under extreme environmental conditions, this transistor meets military-grade standards, ensuring long-term stability and performance. Ideal for power regulation and signal amplification, it offers engineers a dependable solution where precision and durability are paramount. For detailed sourcing and technical support, visit IC Manufacturer.
JANTXV2N3019-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 8 A (max) |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40?C320 |
| Transition Frequency (fT) | 30 MHz (typical) |
| Package | TO-18 Metal Can |
JANTXV2N3019-Transistor Key Features
- High Voltage Handling: Supports up to 100 V collector-base voltage, enabling operation in high-voltage circuits without compromising reliability.
- Robust Collector Current: Capable of continuous collector currents up to 8 A, allowing for effective power amplification in demanding applications.
- Wide DC Current Gain Range: Offers a broad hFE range of 40 to 320, providing design flexibility in amplification and switching configurations.
- Military-Grade Construction: Built to meet stringent standards for temperature and environmental stress, ensuring dependable performance in aerospace and defense systems.
Typical Applications
- Power Amplification Stages in Industrial Control Systems: Utilized for driving loads requiring high current and voltage margins with stable gain.
- Switching Applications in Aerospace Electronics: Suitable for switching high-voltage signals with precision under harsh environmental conditions.
- Signal Amplification in Communication Devices: Enhances low-level signals with consistent gain for reliable data transmission.
- Voltage Regulation Circuits: Employed in stabilizing output voltages in power supplies and battery management systems.
JANTXV2N3019-Transistor Advantages vs Typical Alternatives
Compared to standard commercial transistors, this device offers superior voltage and current ratings combined with military-grade reliability. Its high collector current and voltage capability enable handling heavy loads efficiently, while the metal TO-18 package enhances thermal performance. These advantages make it preferable for applications requiring robust switching and amplification with long-term stability under severe conditions.
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JANTXV2N3019-Transistor Brand Info
The JANTXV2N3019 transistor is part of the JAN (Joint Army-Navy) series, originally qualified to military standards for use in defense and aerospace sectors. It is manufactured by established suppliers specializing in high-reliability semiconductor components. The JAN prefix indicates compliance with MIL-PRF-19500 specifications, ensuring stringent quality control and environmental testing. This makes the transistor a trusted choice for engineers designing mission-critical systems demanding proven durability and performance.
FAQ
What is the maximum collector current rating of the JANTXV2N3019 transistor?
The maximum continuous collector current is rated at 8 amperes, allowing the transistor to handle substantial power loads in switching and amplification circuits without degradation.
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Can this transistor operate at high voltages safely?
Yes, it has a collector-base voltage rating of 100 volts, which enables safe operation in high-voltage environments commonly found in industrial and aerospace applications.
What packaging does the JANTXV2N3019 use, and why is it important?
This transistor







