JANTXV2N2907AUBP-Transistor-PIND NPN Transistor by JANTX | PIND Package

JANTXV2N2907AUBP-Transistor-PIND Overview

The JANTXV2N2907AUBP is a high-reliability PNP transistor designed for demanding industrial and military applications. Manufactured under stringent JAN (Joint Army-Navy) standards, this transistor offers enhanced durability and stability in harsh environments. It supports medium power amplification and switching, making it ideal for robust signal processing tasks. The device??s complementary electrical characteristics ensure consistent performance across a broad temperature range, supporting reliable operation in complex circuits. Sourced from IC Manufacturer, it meets strict quality and reliability parameters preferred by engineers and sourcing specialists in critical applications.

JANTXV2N2907AUBP-Transistor-PIND Key Features

• High voltage and current capability: Supports collector-emitter voltages up to 60V and collector currents up to 600mA, enabling efficient power handling in switching and amplification roles.
• JAN quality and reliability compliance: Ensures suitability for military and aerospace environments where long-term reliability is mandatory.
• Stable gain characteristics: With a minimum DC current gain (hFE) of 20, it provides consistent amplification performance across temperature variations.
• Robust thermal ratings: Capable of operating at junction temperatures up to 200??C, enhancing reliability under thermal stress.

JANTXV2N2907AUBP-Transistor-PIND Technical Specifications

JANTXV2N2907AUBP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior robustness compared to standard commercial PNP transistors, thanks to its JAN certification and metal can package, which improves thermal dissipation and mechanical strength. Its wide operating temperature range and reliable gain stability enhance circuit precision and longevity in mission-critical systems. These factors make it a preferred choice over typical transistors lacking military-grade qualification and ruggedized packaging.

Typical Applications

• Military and aerospace signal amplification, where long-term reliability and stable performance under temperature extremes are mandatory.
• High-reliability switching circuits requiring robust PNP transistors with strong current handling.
• Industrial control systems that demand durable semiconductor devices for harsh environmental conditions.
• Analog and digital interface stages in communication equipment benefiting from low noise and consistent gain characteristics.

JANTXV2N2907AUBP-Transistor-PIND Brand Info

The JANTXV2N2907AUBP transistor is produced under the JAN military standard, ensuring it meets strict performance and reliability criteria for defense and aerospace sectors. Manufactured by an established semiconductor supplier, this PNP transistor incorporates proven design and process controls that support extended lifecycle and stable operation. Its packaging and screening protocols confirm the device??s readiness for industrial applications with high uptime requirements.

FAQ

What is the primary application focus of this transistor?

This transistor is primarily designed for use in military, aerospace, and industrial environments where enhanced reliability, temperature tolerance, and consistent electrical performance are critical. It excels in amplification and switching tasks under demanding conditions.

How does the JAN certification impact the transistor??s reliability?

JAN certification ensures the device has passed rigorous testing for environmental stress, electrical performance, and mechanical durability. This guarantees reliability and consistency in harsh operating conditions, making it suitable for mission-critical applications.

What package type is used and why is it important?

The transistor uses a TO-18 metal can package, which provides superior thermal conductivity and mechanical protection compared to plastic packages. This improves heat dissipation and overall device robustness.

What are the key electrical limits engineers should consider?

Engineers should note the maximum collector-emitter voltage of 60V, maximum collector current of 600mA, and maximum junction temperature of 200??C to ensure operation within safe and reliable limits.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, it is suitable for moderate-frequency signal amplification and switching tasks, though not for very high-frequency RF applications.