JANTXV2N2907AUB-Transistor Overview
The JANTXV2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade applications. Featuring robust electrical characteristics and enhanced reliability, this transistor is built to operate efficiently under demanding conditions. It offers a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V, making it suitable for medium power signal processing. The device complies with stringent JEDEC standards, ensuring consistent quality and durability. Engineers and sourcing professionals benefit from its rugged design and compatibility within a wide temperature range, providing reliable operation in harsh environments. For detailed component sourcing, see IC Manufacturer.
JANTXV2N2907AUB-Transistor Key Features
- High Collector Current Capability: Supports up to 600 mA, enabling efficient switching and amplification in power-critical circuits.
- Robust Voltage Ratings: Collector-Emitter voltage of 60 V ensures reliable operation in various industrial and military systems.
- Enhanced Gain Characteristics: DC current gain (hFE) ranges from 40 to 250, allowing flexible design margins for amplification.
- Military-Grade Construction: Meets JAN (Joint Army-Navy) specifications for durability and quality under extreme environmental conditions.
JANTXV2N2907AUB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Maximum Collector-Emitter Voltage (VCEO) | 60 V |
| Maximum Collector Current (IC) | 600 mA |
| DC Current Gain (hFE) | 40 to 250 (depending on test conditions) |
| Power Dissipation (Ptot) | 800 mW (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature Range (Tj) | -65??C to +200??C |
| Package Type | TO-18 Metal Can |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
JANTXV2N2907AUB-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and performance compared to standard commercial devices, primarily due to its military-grade construction and higher maximum operating temperatures. Its robust voltage and current ratings provide greater design flexibility and durability in harsh environments. The wide gain range enhances circuit precision, while the metal can package ensures improved thermal stability. These advantages make it an optimal choice for applications requiring consistent operation under stress.
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Typical Applications
- Switching and amplification in rugged industrial control systems, where dependable operation at elevated temperatures and voltage conditions is critical.
- Military and aerospace electronics requiring components with certified reliability and extended temperature range.
- Signal amplification in medium power audio and RF circuits where linearity and gain stability are essential.
- General-purpose transistor functions in power management and driver circuits within harsh or variable environments.
JANTXV2N2907AUB-Transistor Brand Info
The JANTXV2N2907AUB is part of a specialized line of Jan (Joint Army-Navy) certified transistors, recognized for their stringent quality control and ruggedness. Designed to meet military standards, this transistor brand emphasizes reliability in extreme operating conditions. The device??s metal can packaging and tested electrical characteristics reflect its suitability for high-reliability applications, making it a trusted choice for engineers and sourcing specialists focused on durable semiconductor components.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a maximum continuous collector current of 600 mA, enabling it to handle moderate power loads effectively in switching and amplification roles.
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What packaging does this transistor use, and why is it important?
This device is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, enhancing its reliability in harsh operating environments.
Can this transistor operate at high temperatures?
Yes, it has a junction temperature range from -65??C up to +200??C, allowing it to function reliably in extreme thermal conditions typical of military and industrial applications.
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What voltage ratings are specified for the transistor??s terminals?
The maximum collector-emitter and collector-base voltages are both rated at 60 V, while the emitter-base voltage is rated at 5 V, ensuring safe operation within these limits.
How does the current gain (hFE) variability affect circuit design?
The DC current gain ranges from 40 to 250 depending on test conditions, which provides designers with flexibility in amplification but requires consideration of gain variation during circuit design for consistent performance.
