JANTXV2N2907AUA/TR Diode Transient Voltage Suppressor – JAN Brand, DO-214AA Package

  • This device performs high-efficiency switching to optimize power conversion and improve system energy use.
  • The model JANTXV2N2907AUA/TR offers a key electrical characteristic that enhances performance in demanding circuits.
  • Its compact package reduces board space, facilitating integration into designs with limited area availability.
  • Ideal for power management in consumer electronics, it ensures stable operation under varying load conditions.
  • Manufactured under strict quality controls, the component delivers consistent reliability in long-term applications.
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产品上方询盘

JANTXV2N2907AUA/TR Overview

The JANTXV2N2907AUA/TR is a high-reliability PNP bipolar junction transistor designed to meet stringent military standards. Engineered for robust switching and amplification tasks, this transistor delivers consistent performance under extreme environmental conditions. Its high voltage and current capacity coupled with a sturdy TO-18 metal can package ensure durability and long-term stability in critical applications. Ideal for aerospace, defense, and industrial electronics, this device supports engineers and sourcing specialists in deploying reliable semiconductor solutions. For more detailed information, visit the IC Manufacturer website.

JANTXV2N2907AUA/TR Key Features

  • High Voltage Capability: Supports collector-emitter voltages up to 60 V, enabling operation in demanding power switching circuits.
  • Substantial Collector Current: Handles continuous collector currents up to 1 A, suitable for moderate power amplification tasks.
  • Military-Grade Reliability: Complies with JAN (Joint Army-Navy) specifications, ensuring superior performance in harsh environments.
  • TO-18 Hermetic Package: Provides excellent thermal dissipation and environmental protection, enhancing device lifespan and stability.
  • Low Saturation Voltage: Enhances switching efficiency, reducing power loss and heat generation in circuit designs.
  • Gain Stability: Offers a consistent DC current gain (hFE) across operating conditions, critical for predictable circuit behavior.
  • High Transition Frequency: Suitable for moderate frequency amplification applications, ensuring signal integrity.

JANTXV2N2907AUA/TR Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 60 V
Collector-Base Voltage VCBO 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 1 A
Power Dissipation PD 800 mW
DC Current Gain (hFE) hFE 40?C250 (typical)
Transition Frequency fT 100 MHz
Operating Temperature Range TJ -55 to +125 ??C

JANTXV2N2907AUA/TR Advantages vs Typical Alternatives

This transistor stands out against typical alternatives due to its military-grade qualification, ensuring enhanced reliability under extreme conditions. Its combination of high voltage tolerance and stable gain offers engineers greater design flexibility. The hermetic TO-18 package further increases durability and thermal management, reducing failure rates compared to plastic-encapsulated devices. These advantages make the device a trusted choice for applications demanding longevity and precision.

Typical Applications

  • High-reliability switching and amplification in aerospace and defense electronic systems, where performance stability is critical over temperature extremes.
  • Industrial instrumentation circuits requiring durable transistors capable of handling moderate power loads.
  • Signal amplification in communication equipment benefiting from consistent gain and frequency response.
  • Military-grade electronic assemblies needing components compliant with Joint Army-Navy standards for rugged environments.

JANTXV2N2907AUA/TR Brand Info

The JANTXV2N2907AUA/TR is part of a series of military-qualified bipolar transistors manufactured to meet exacting defense and aerospace standards. The “JAN” designation confirms adherence to strict quality and reliability protocols, ensuring that each component performs consistently in harsh conditions. Packaged in a robust TO-18 metal can, this device reflects the brand??s commitment to delivering semiconductor solutions that combine durability, precision, and long-term operational stability.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The transistor can withstand a maximum collector-emitter voltage of 60 volts, making it suitable for circuits operating at moderate voltage levels where reliable switching or amplification is necessary.

Can this device operate reliably at elevated temperatures?

Yes, it supports an operating junction temperature range from -55??C up to +125??C, allowing it to function reliably in environments experiencing wide temperature variations.

What benefits does the TO-18 package offer compared to plastic packages?

The TO-18 metal can package provides superior hermetic sealing and thermal conductivity, which enhances device longevity and thermal management, critical for applications exposed to harsh environmental conditions.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

With a transition frequency around 100 MHz, this transistor is capable of moderate frequency amplification tasks, suitable for many communication and signal processing applications.

What does the JAN specification indicate about the device??s quality?

JAN (Joint Army-Navy) certification indicates that the transistor meets rigorous military standards for reliability, quality, and environmental endurance, ensuring dependable operation in mission-critical systems.

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