JANTXV2N2907AL-Transistor PNP Amplifier Transistor in TO-18 Metal Package by JAN

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its PNP configuration supports current flow regulation essential for analog and switching applications.
  • The compact TO-92 package offers space-saving benefits for densely populated circuit boards.
  • Ideal for audio amplification tasks, it enhances signal clarity and stability in sound systems.
  • Manufactured to meet industry standards, ensuring consistent performance and long-term reliability.
Microchip Technology-logo
产品上方询盘

JANTXV2N2907AL-Transistor Overview

The JANTXV2N2907AL is a high-reliability PNP bipolar junction transistor designed for demanding industrial and military applications. It offers robust performance with a maximum collector current of 600mA and a collector-emitter voltage rating of 60V, making it suitable for switching and amplification tasks in harsh environments. The transistor is housed in a TO-18 metal can package, which provides enhanced thermal dissipation and mechanical durability. Its JAN TX (Joint Army-Navy Transistor) classification ensures compliance with stringent military standards, guaranteeing long-term reliability and stable operation. Engineers and sourcing specialists can trust this device for critical electronic circuits requiring dependable performance and rigorous quality standards. For detailed technical support and sourcing, visit IC Manufacturer.

JANTXV2N2907AL-Transistor Key Features

  • High collector current capability: Supports up to 600mA continuous collector current, enabling efficient switching and amplification in medium-power circuits.
  • Collector-emitter voltage rating: Rated for 60V, providing ample headroom for various voltage applications and protecting against breakdown under load.
  • TO-18 hermetic metal package: Offers superior thermal conductivity and environmental protection, critical for reliability in aerospace and military environments.
  • JAN TX military specification compliance: Ensures rigorous quality control and reliability standards for mission-critical applications.

JANTXV2N2907AL-Transistor Technical Specifications

Parameter Value Units
Transistor Type PNP Bipolar Junction
Collector-Emitter Voltage (Vceo) 60 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 600 mA
DC Current Gain (hFE) 40?C250
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 800 mW
Package Type TO-18 Metal Can
Operating Temperature Range -55 to +200 ??C

JANTXV2N2907AL-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and thermal performance compared to standard plastic-encapsulated devices. Its hermetic TO-18 metal can package and military-grade JAN TX certification ensure superior durability and stable gain over wide temperature ranges. These features make it advantageous for high-reliability and high-temperature applications where typical commercial transistors may fail or degrade prematurely.

Typical Applications

  • Military and aerospace electronic circuits requiring rugged, reliable PNP transistors for switching and amplification under harsh environmental conditions.
  • Industrial control systems where stable transistor gain and voltage ratings ensure consistent performance in power regulation and signal processing.
  • High-reliability instrumentation circuits demanding long-term stability and resistance to thermal and mechanical stress.
  • Low-noise audio amplifiers and sensor interface circuits benefiting from the transistor’s consistent gain and low leakage currents.

JANTXV2N2907AL-Transistor Brand Info

The JANTXV2N2907AL transistor is produced under the JAN TX military quality classification, reflecting its adherence to strict reliability and performance standards set by defense and aerospace specifications. This designation indicates rigorous screening, testing, and manufacturing controls to meet or exceed military-grade requirements. The brand is recognized for delivering transistors that combine proven semiconductor technology with robust packaging, tailored for environments where failure is not an option. Engineers rely on this product for trusted performance in mission-critical electronic designs.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum continuous collector current of 600mA, making it suitable for medium-power switching and amplification tasks in various electronic circuits.

What package type does the transistor use, and why is it beneficial?

This device is housed in a TO-18 hermetic metal can package. This packaging offers superior thermal dissipation and protects the transistor from environmental contamination, which is essential for high-reliability and military applications.

What voltage ratings are specified for the transistor?

The maximum collector-emitter voltage (Vceo) and collector-base voltage (Vcbo) are both rated at 60V. The emitter-base voltage (Vebo) is rated at 5V, defining the safe operating limits for these terminals.

📩 Contact Us

产品中间询盘

How does the transistor??s gain vary across its operating range?

The DC current gain (hFE) ranges between 40 and 250 depending on the operating conditions, providing flexibility for different biasing and amplification requirements in circuit design.

Is this transistor suitable for operation in extreme temperature environments?

Yes, the transistor is rated for an operating temperature range from -55??C to +200??C, making it well-suited for applications requiring stable performance under extreme thermal conditions.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?