JANTXV2N2484-Transistor by JAN | High-Speed Switching Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling enhanced control in electronic circuits.
  • It supports efficient switching to improve performance and reduce power loss in devices.
  • The compact package offers board-space savings, simplifying integration into dense circuit layouts.
  • Ideal for use in signal processing applications, it helps maintain signal integrity under varying loads.
  • Manufactured to meet reliability standards, ensuring consistent operation over extended periods.
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JANTXV2N2484-Transistor Overview

The JANTXV2N2484-Transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification applications in demanding industrial environments. It features a robust collector-emitter voltage rating and reliable current handling capability, making it suitable for precision power control and signal processing. This transistor delivers consistent electrical characteristics and enhanced durability through JAN (Joint Army-Navy) certification standards. Engineers and sourcing specialists benefit from its stable gain and low leakage currents, enabling integration into military, aerospace, and industrial control systems. For more detailed specifications and sourcing, visit IC Manufacturer.

JANTXV2N2484-Transistor Key Features

  • High Voltage Tolerance: Supports collector-emitter voltage up to 80V, ensuring reliable operation in high-voltage switching circuits.
  • Moderate Collector Current Capacity: Handles up to 1A collector current, ideal for medium-power amplification and switching tasks.
  • Low Leakage Current: Minimizes unwanted current flow, improving circuit efficiency and stability in sensitive applications.
  • JAN Certification: Meets rigorous military and aerospace standards for reliability and environmental endurance.
  • Gain Bandwidth Product: Offers a current gain (hFE) range of 40 to 120, suitable for various analog and digital circuit requirements.
  • TO-39 Metal Can Package: Provides excellent thermal dissipation and mechanical robustness, enhancing device longevity.
  • Wide Operating Temperature Range: Operates reliably from -55??C to +125??C, supporting harsh industrial conditions.

JANTXV2N2484-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 80 V
Collector-Base Voltage (Vcbo) 100 V
Emitter-Base Voltage (Vebo) 5 V
Continuous Collector Current (Ic) 1 A
Power Dissipation (Pc) 1 W
DC Current Gain (hFE) 40 to 120 ??
Transition Frequency (fT) ?? MHz
Operating Junction Temperature (Tj) -55 to +125 ??C
Storage Temperature Range -65 to +150 ??C
Package Type TO-39 ??

JANTXV2N2484-Transistor Advantages vs Typical Alternatives

This transistor stands out with its military-grade JAN certification, ensuring superior reliability and performance under extreme conditions compared to commercial-grade devices. Its combination of high voltage tolerance and moderate current capacity offers flexibility for a wide range of industrial applications. The TO-39 package enhances thermal management, reducing failure rates and improving system uptime. These features collectively provide engineers with a dependable, precise transistor solution that meets stringent quality and durability expectations.

Typical Applications

  • Power Switching Circuits: Ideal for medium-power switching in industrial control systems requiring stable performance and low leakage currents over wide temperature ranges.
  • Signal Amplification: Used in analog amplification stages where consistent current gain and noise reduction are critical for signal integrity.
  • Military and Aerospace Electronics: Suited for harsh environment applications demanding high reliability and compliance with military standards.
  • Industrial Automation: Applicable in sensors, actuators, and control modules where robust transistor performance ensures long operational life.

JANTXV2N2484-Transistor Brand Info

The JANTXV2N2484-Transistor is produced under stringent manufacturing and quality control processes aligned with the Joint Army-Navy (JAN) standards. This certification guarantees enhanced reliability and environmental resistance, making it a preferred choice for defense and aerospace sectors. The brand focuses on delivering transistors that meet or exceed military specifications, ensuring consistent device behavior in mission-critical applications. Its legacy in the semiconductor market reflects a commitment to durability and precise electrical performance for professional engineering use.

FAQ

What is the maximum collector current rating for this transistor?

The device supports a continuous collector current of up to 1 ampere, making it suitable for medium-power switching and amplification applications where reliable current handling is essential.

What package type does this transistor use, and why is it important?

This transistor comes in a TO-39 metal can package, which provides superior thermal dissipation and mechanical protection. This packaging enhances reliability and longevity, especially in industrial and military environments.

Can this transistor operate in extreme temperature conditions?

Yes, it is rated for operation across a wide temperature range from -55??C to +125??C, allowing it to function effectively in harsh industrial and aerospace environments without performance degradation.

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What advantages does the JAN certification provide?

JAN certification indicates that the transistor meets rigorous military standards for quality, reliability, and environmental endurance. This ensures the device performs consistently under shock, vibration, and temperature extremes.

What is the typical current gain (hFE) range of this transistor?

The transistor offers a DC current gain ranging from 40 to 120, providing flexibility for various analog and digital circuit designs requiring different amplification levels.

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