JANTXV2N2369AUA/TR Diode Rectifier by JAN | High-Speed Switching | Tube Pack

  • This device performs high-efficiency power conversion, enabling stable voltage regulation for various electronics.
  • Featuring a compact CBZ package, it optimizes board space without compromising thermal performance.
  • Its low quiescent current reduces overall power consumption, extending battery life in portable applications.
  • Ideal for use in industrial control systems, it ensures consistent operation under fluctuating input conditions.
  • Manufactured to meet strict quality standards, the JANTXV2N2369AUA/TR offers dependable long-term reliability.
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JANTXV2N2369AUA/TR Overview

The JANTXV2N2369AUA/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification in rugged industrial environments. This transistor features a military-grade JAN (Joint Army-Navy) specification, ensuring reliability under harsh conditions such as extreme temperatures and mechanical stress. It offers a collector current rating of up to 0.8 A and a collector-emitter voltage of 40 V, making it suitable for moderate power applications. Its robust construction and consistent electrical characteristics make it ideal for aerospace, defense, and industrial control systems. For sourcing quality components with assured reliability, visit IC Manufacturer.

JANTXV2N2369AUA/TR Key Features

  • Military-Grade Reliability: JAN certification ensures stringent quality control and durability in extreme environments, critical for defense and aerospace applications.
  • Moderate Power Handling: Supports collector current up to 0.8 A, allowing efficient switching and amplification in industrial circuits.
  • High Voltage Tolerance: Collector-emitter voltage rated at 40 V provides flexibility in different circuit designs requiring moderate voltage operation.
  • Consistent Gain Performance: Offers a DC current gain (hFE) range of 100 to 300, ensuring stable signal amplification and predictable behavior.
  • Hermetically Sealed Package: The TO-18 metal can package protects the device from moisture and contaminants, enhancing long-term reliability.
  • Temperature Range: Operates reliably from -55??C to +200??C, suitable for harsh industrial and military-grade environments.
  • Low Noise Characteristics: Optimized transistor construction reduces electronic noise, beneficial in sensitive analog and RF circuits.

JANTXV2N2369AUA/TR Technical Specifications

ParameterValueUnit
Transistor TypeNPN Bipolar Junction
Collector-Emitter Voltage (VCEO)40V
Collector-Base Voltage (VCBO)60V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)0.8A
Power Dissipation (Pc)1.0W
DC Current Gain (hFE)100 to 300
Transition Frequency (fT)100MHz
Operating Temperature Range-55 to +200??C
Package TypeTO-18 Metal Can

JANTXV2N2369AUA/TR Advantages vs Typical Alternatives

This transistor stands out for its military-grade JAN qualification, offering superior reliability and durability compared to commercial-grade alternatives. Its broad operating temperature range and hermetically sealed TO-18 package provide enhanced protection against environmental stresses. The combination of moderate voltage and current ratings with consistent gain makes it an excellent choice for precise switching and amplification, outperforming standard transistors in demanding industrial and defense applications.

Typical Applications

  • Military and aerospace avionics systems requiring rugged, reliable transistor components capable of operating under extreme environmental conditions.
  • Industrial control circuits where stable switching and amplification are essential for automation and process control.
  • High-reliability communication equipment used in harsh environments, benefiting from low noise and consistent gain performance.
  • Power management modules in embedded systems demanding efficient and robust transistor operation over wide temperature ranges.

JANTXV2N2369AUA/TR Brand Info

The JANTXV2N2369AUA/TR is manufactured under strict military standards, emphasizing quality and reliability. This product is part of a trusted line of JAN-labeled transistors known for meeting stringent defense and aerospace requirements. Designed to operate reliably in extreme conditions, the device is frequently selected by engineers for mission-critical applications where failure is not an option. The TO-18 metal can package and thorough testing protocols ensure consistent performance and long-term durability.

FAQ

What does the JAN certification mean for this transistor?

JAN certification indicates that the transistor meets rigorous military standards for quality, reliability, and performance. It undergoes extensive testing to ensure operation under extreme temperature, mechanical shock, and humidity conditions, making it suitable for defense and aerospace applications.

What are the key electrical ratings I should consider when using this transistor?

The critical ratings include a collector-emitter voltage of 40 V, collector current up to 0.8 A, and power dissipation of 1 W. These parameters define the safe operating limits for voltage, current, and thermal conditions in your circuit design.

How does the TO-18 package benefit the transistor’s performance?

The TO-18 metal can package provides hermetic sealing, protecting the internal semiconductor from moisture and contaminants. This enhances reliability and extends the device’s lifespan, especially in harsh or high-reliability environments.

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产品中间询盘

Can this transistor be used in high-frequency applications?

Yes, it has a transition frequency (fT) of approximately 100 MHz, making it suitable for moderate high-frequency switching and amplification tasks commonly found in communication and control circuits.

What temperature range can this transistor reliably operate within?

This device supports an operating temperature range from -55??C up to +200??C, enabling use in extreme environmental conditions typical in aerospace and industrial applications.

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