JANTXV2N2222AUBP-Transistor-PIND NPN Switching Transistor in TO-18 Metal Can Package

JANTXV2N2222AUBP-Transistor-PIND Overview

The JANTXV2N2222AUBP-Transistor-PIND is a high-reliability bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade applications. Manufactured to meet stringent JAN (Joint Army-Navy) standards, it delivers robust performance under harsh environmental conditions, ensuring long-term operational stability. Its PIND (Particle Impact Noise Detection) testing guarantees defect-free semiconductor integrity, making it suitable for mission-critical electronics. This transistor offers reliable switching speeds, a moderate current gain, and excellent thermal characteristics, supporting diverse applications in control circuits and signal amplification. For detailed information and procurement options, visit IC Manufacturer.

JANTXV2N2222AUBP-Transistor-PIND Technical Specifications

JANTXV2N2222AUBP-Transistor-PIND Key Features

• High voltage tolerance: Supports collector-base voltages up to 75 V, enabling robust operation in demanding circuits.
• Reliable current gain range: Provides a typical h_FE between 100 and 300, ensuring consistent amplification performance.
• Military-grade PIND screening: Ensures defect-free semiconductor integrity by detecting internal particle contamination, critical for high-reliability applications.
• Compact TO-18 metal can package: Offers excellent thermal conductivity and mechanical protection, suitable for harsh environments.

Typical Applications

• Signal amplification in control systems requiring stable gain and low noise in industrial automation equipment.
• Switching in low- to medium-power circuits, including relay drivers and interface stages.
• Military and aerospace electronics where high reliability and PIND-tested components are mandatory.
• General purpose amplification and switching in communication and instrumentation devices.

JANTXV2N2222AUBP-Transistor-PIND Advantages vs Typical Alternatives

This transistor stands out by combining military-grade quality with PIND screening, enhancing reliability compared to standard commercial BJTs. Its robust voltage ratings and consistent current gain make it preferable for sensitive industrial and defense applications. The TO-18 metal can package improves thermal management and mechanical durability, providing longer lifecycle and stable operation under challenging conditions compared to plastic-encapsulated alternatives.

JANTXV2N2222AUBP-Transistor-PIND Brand Info

The JANTXV2N2222AUBP is manufactured under the JAN (Joint Army-Navy) military standard, which ensures devices meet stringent performance and reliability criteria. This transistor is typically produced by established semiconductor manufacturers who specialize in high-quality, screened components for defense and aerospace markets. The JAN designation reflects rigorous testing including PIND screening, ensuring the transistor??s integrity in mission-critical applications. This product is recognized for its consistent electrical characteristics, rugged packaging, and suitability for environments where failure is not an option.

FAQ

What does the PIND test ensure for this transistor?

PIND (Particle Impact Noise Detection) testing verifies the absence of loose particles inside the transistor package that could cause internal shorts or failures. This screening method is critical for military and aerospace applications, ensuring long-term reliability and robustness under vibration and shock conditions.

What are the voltage ratings of this transistor?

The transistor supports a collector-emitter voltage of 40 V, collector-base voltage of 75 V, and emitter-base voltage of