JANTXV2N2222AUB/TR NPN Transistor by JAN – TO-92 Package, High Gain Switching

  • This transistor provides efficient switching and amplification, enabling improved circuit performance in various designs.
  • Its voltage and current ratings support reliable operation under typical load conditions, ensuring device stability.
  • The compact package reduces board space, allowing for denser circuit layouts and easier thermal management.
  • Commonly used in power regulation and signal amplification, it enhances overall system responsiveness and control.
  • Manufactured under stringent quality controls, the device offers dependable long-term performance in demanding environments.
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JANTXV2N2222AUB/TR Overview

The JANTXV2N2222AUB/TR is a robust NPN bipolar junction transistor designed for high-reliability applications requiring stable switching and amplification performance. Featuring a TO-18 metal can package, it offers enhanced thermal conductivity and mechanical durability, making it ideal for aerospace, defense, and industrial systems. With a focus on military-grade quality, this transistor ensures consistent operation under stringent environmental conditions. Engineers and sourcing specialists trust this device for its dependable electrical characteristics and long-term reliability, backed by stringent testing and qualification standards from IC Manufacturer.

JANTXV2N2222AUB/TR Key Features

  • High voltage and current handling: Supports collector-emitter voltages up to 40 V and collector currents up to 800 mA, enabling robust switching and amplification in demanding circuits.
  • Military-grade reliability: Designed and qualified to meet stringent MIL-STD-883 standards, ensuring dependable performance in harsh environmental conditions.
  • TO-18 hermetic metal can package: Provides superior thermal dissipation and mechanical protection compared to plastic encapsulated alternatives, enhancing device longevity.
  • Low transition frequency: Approximately 250 MHz, suitable for medium-frequency analog and switching applications requiring stable gain characteristics.

JANTXV2N2222AUB/TR Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 75 V
Emitter-Base Voltage (Vebo) 6 V
Collector Current (Ic) 800 mA
Power Dissipation (Pc) 625 mW
Transition Frequency (ft) 250 MHz
Gain Bandwidth Product 100-300 hFE (typical)
Package Type TO-18 Metal Can

JANTXV2N2222AUB/TR Advantages vs Typical Alternatives

This transistor offers enhanced reliability and improved thermal management due to its metal can packaging, unlike typical plastic-packaged alternatives. Its military-grade qualification ensures stable operation over a wide temperature range and harsh environments, making it a superior choice for critical aerospace and defense systems where reliability and precision are paramount.

Typical Applications

  • Switching and amplification in aerospace and defense electronics requiring ruggedness and long-term reliability under extreme conditions.
  • High-speed switching circuits in industrial automation systems where stable gain and thermal management are essential.
  • Signal processing and analog amplification applications demanding consistent performance at medium frequencies.
  • General-purpose low noise amplification in instrumentation and control systems operating in challenging environments.

JANTXV2N2222AUB/TR Brand Info

The JANTXV2N2222AUB/TR is manufactured under strict quality controls to meet military standards, reflecting a commitment to high-reliability semiconductor solutions. This transistor is part of a product family well-regarded for durability and precision, supporting customers in aerospace, defense, and industrial sectors. The brand emphasizes robust design, traceability, and comprehensive testing to ensure each device performs reliably in mission-critical systems.

FAQ

What are the maximum voltage ratings for this transistor?

This transistor supports a maximum collector-emitter voltage (Vceo) of 40 V, a collector-base voltage (Vcbo) of 75 V, and an emitter-base voltage (Vebo) of 6 V. These ratings define the maximum voltages the device can withstand without breakdown.

What type of package does this transistor use and why is it important?

It uses a TO-18 hermetic metal can package, which enhances thermal dissipation and mechanical durability. This packaging is preferred in military and aerospace applications where environmental resistance and long-term reliability are critical.

What is the typical current handling capability of this transistor?

The device can handle a collector current (Ic) of up to 800 mA, making it suitable for moderate power switching and amplification tasks in various electronic circuits.

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Is this transistor suitable for high-frequency applications?

With a transition frequency (ft) of approximately 250 MHz, this transistor is suitable for medium-frequency applications. It is effective in analog and switching circuits that operate within this frequency range.

What industries commonly use this type of transistor?

It is primarily used in aerospace, defense, and industrial automation sectors where high reliability, environmental resistance, and stable electrical performance are essential requirements.

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