JANTXV2N2222AUA-Transistor Overview
The JANTXV2N2222AUA transistor is a high-reliability, military-grade NPN bipolar junction transistor designed for switching and amplification applications. It features robust construction to withstand harsh environments, including wide temperature ranges and mechanical stress, making it suitable for aerospace, defense, and industrial electronics. This transistor provides dependable performance with a DC current gain optimized for low noise and high gain operation. Sourced from IC Manufacturer, it meets stringent quality standards ensuring consistent functionality in critical applications.
JANTXV2N2222AUA-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 40 V |
| Collector Current (Ic) | 800 mA continuous |
| Gain Bandwidth Product (fT) | 300 MHz (typical) |
| DC Current Gain (hFE) | 100 ?C 300 (varies by test conditions) |
| Power Dissipation (Ptot) | 625 mW (max) |
| Junction Temperature (Tj) | -55??C to +200??C |
| Package Type | TO-18 Metal Can |
| Noise Figure | Low noise operation suitable for signal amplification |
JANTXV2N2222AUA-Transistor Key Features
- Military-Grade Reliability: Designed to operate reliably under extreme temperature and mechanical stress conditions, ensuring stable performance in harsh environments.
- High Gain and Low Noise: Provides a wide DC current gain range with low noise characteristics, ideal for sensitive signal amplification.
- Wide Temperature Range: Supports junction temperatures from -55??C to +200??C, enabling use in aerospace and defense applications with extreme thermal demands.
- Robust Metal Can Package: The TO-18 package improves thermal dissipation and mechanical protection, enhancing durability and long-term reliability.
Typical Applications
- Signal amplification in aerospace and defense electronic systems requiring robust, low-noise NPN transistors with high gain and reliability.
- Switching applications in industrial control circuits that demand stable operation under variable environmental conditions.
- Low-level RF amplification circuits where high gain bandwidth and low noise are critical for signal integrity.
- Military and avionics equipment benefiting from tightly controlled specifications and ruggedized packaging for mission-critical performance.
JANTXV2N2222AUA-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and performance over standard commercial devices due to its military-grade construction, wide operating temperature range, and superior noise characteristics. Its metal can packaging facilitates improved thermal management and mechanical resilience, making it preferable for mission-critical environments where sensitivity, accuracy, and long-term stability are paramount compared to typical plastic-encapsulated transistors.
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JANTXV2N2222AUA-Transistor Brand Info
The JANTXV2N2222AUA is a military-qualified variant of the popular 2N2222A transistor, typically manufactured by semiconductor suppliers specializing in high-reliability components for defense and aerospace sectors. This transistor is often produced by trusted suppliers recognized for strict quality control and adherence to MIL-STD-883 testing standards. The brand behind this device emphasizes ruggedness, consistent electrical performance, and traceability, catering to engineers and sourcing specialists requiring components that meet stringent military and industrial requirements.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 800 mA. This rating ensures the device can handle moderate power switching and amplification tasks without risk of overheating or damage under specified operating conditions.
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What temperature range can the JANTXV2N2222AUA reliably operate in?
This transistor supports an extended junction temperature range from -55??C to +200??C, allowing reliable operation in extreme thermal environments typical






