JANTXV2N2222AL-Transistor Overview
The JANTXV2N2222AL is a robust NPN bipolar junction transistor (BJT) designed for high-reliability applications in aerospace, military, and industrial systems. It offers dependable switching and amplification capabilities, operating efficiently at moderate voltages and currents. This transistor features a hermetically sealed metal can package that ensures excellent environmental stability and long-term durability. With a maximum collector current rating of 600 mA and a collector-emitter voltage of 40 V, it is suitable for signal amplification and low-power switching tasks. Available from IC Manufacturer, this transistor meets stringent quality standards for mission-critical electronics.
JANTXV2N2222AL-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector Current (IC) | 600 mA (max) |
| Power Dissipation (Ptot) | 500 mW |
| DC Current Gain (hFE) | 100 to 300 |
| Transition Frequency (fT) | 250 MHz (typical) |
| Package Type | Hermetically Sealed TO-18 Metal Can |
| Operating Temperature Range | -55??C to +125??C |
JANTXV2N2222AL-Transistor Key Features
- High reliability hermetic packaging: Ensures stable performance in harsh environments, making it ideal for aerospace and military-grade applications.
- Moderate voltage and current ratings: Supports switching and amplification tasks up to 40 V and 600 mA, suitable for low- to medium-power designs.
- Wide operating temperature range: Maintains consistent electrical characteristics from -55??C to +125??C, enabling use in extreme temperature conditions.
- High current gain: Provides effective signal amplification with a DC gain typically between 100 and 300, optimizing circuit efficiency.
Typical Applications
- Switching and amplification in aerospace and military electronic circuits requiring high reliability and environmental resistance.
- Low-power signal amplification in communication equipment and instrumentation systems.
- General-purpose switching in industrial automation systems where durability under temperature extremes is critical.
- Embedded systems and control electronics demanding long-term stable transistor performance.
JANTXV2N2222AL-Transistor Advantages vs Typical Alternatives
This transistor offers superior environmental stability and reliability through its hermetically sealed metal can package, outperforming plastic-encapsulated alternatives in harsh conditions. Its high current gain and moderate voltage ratings allow precise and efficient switching or amplification in demanding industrial and aerospace applications. The wide temperature tolerance ensures dependable operation where typical transistors may degrade, making it a preferred choice for mission-critical electronics requiring robust performance.
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JANTXV2N2222AL-Transistor Brand Info
The JANTXV2N2222AL is a military-grade variant of the popular 2N2222 transistor, typically produced by manufacturers specializing in aerospace and defense components. It adheres to stringent JEDEC and MIL-STD-883 standards, ensuring quality and reliability under severe environmental conditions. The device is recognized for its hermetic TO-18 metal can package, which protects the transistor from humidity, dust, and mechanical stress, aligning with the requirements of high-reliability sectors. This product is widely used in applications demanding long lifecycle and consistent performance.
FAQ
What distinguishes the JANTXV2N2222AL from commercial 2N2222 transistors?
The key difference lies in its hermetically sealed metal can packaging and rigorous testing to meet military standards. This ensures enhanced environmental protection and reliability for high-stress applications, which commercial plastic-encapsulated transistors may not provide.
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