JANTXV2N2219AP-Transistor-PIND NPN Bipolar Junction Transistor in PIND Package by ON Semiconductor

JANTXV2N2219AP-Transistor-PIND Overview

The JANTXV2N2219AP-Transistor-PIND is a robust, high-performance bipolar junction transistor (BJT) designed for industrial and military-grade applications. It offers reliable switching and amplification capabilities with enhanced durability under elevated temperature and voltage conditions. Built to meet stringent JEDEC JANTX standards, it ensures long-term stability and consistent operation in demanding environments. This transistor is ideal for engineers and sourcing specialists seeking a precision component optimized for signal amplification, switching, and general-purpose use in rugged industrial electronics. For more detailed semiconductor solutions, visit IC Manufacturer.

JANTXV2N2219AP-Transistor-PIND Technical Specifications

JANTXV2N2219AP-Transistor-PIND Key Features

• High voltage and current ratings: Supports up to 40 V collector-emitter voltage and 800 mA collector current, enabling robust switching and amplification in industrial circuits.
• Wide operating temperature range: Rated from -65??C to +200??C, ensuring reliable performance in harsh environments and military applications.
• High gain bandwidth product: With a typical 250 MHz transition frequency, this transistor provides fast switching speeds and efficient signal amplification.
• JEDEC JANTX qualification: Guarantees stringent quality and reliability standards for mission-critical designs.

Typical Applications

• Signal amplification and switching in industrial control systems where reliability and temperature tolerance are essential.
• Military and aerospace electronic circuits requiring robust, high-reliability transistors capable of operating in extreme conditions.
• General-purpose amplification in instrumentation and sensor interface applications demanding stable gain and frequency response.
• Low noise driver stages in communication equipment benefiting from the transistor??s high gain and frequency characteristics.

JANTXV2N2219AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior reliability and performance compared to standard commercial-grade devices due to its JEDEC JANTX qualification and extended temperature range. Its high gain bandwidth and power dissipation capacity make it well-suited for precision amplification and switching tasks where consistent operation under harsh environments is critical. This ensures enhanced device longevity and less downtime, providing a clear advantage for industrial and military applications.

JANTXV2N2219AP-Transistor-PIND Brand Info

The JANTXV2N2219AP-Transistor-PIND is a product aligned with JEDEC JANTX military standards, commonly manufactured by reputable semiconductor providers specializing in high-reliability discrete components. The “JANTX” prefix denotes stringent testing and screening for extended temperature ranges and ruggedness. This transistor typically originates from legacy manufacturers known for producing industrial and military-grade semiconductors, ensuring quality and traceability. It is often sourced through authorized distributors specializing in defense and aerospace electronics.

FAQ

What does the JEDEC JANTX designation mean for this transistor?

The JEDEC JANTX designation indicates that the transistor meets strict military-level quality and reliability standards. It is tested for extended temperature operation, electrical performance, and ruggedness, ensuring suitability for harsh environments and critical applications.

What is the maximum collector current for this transistor?

This transistor supports a maximum collector current of 800 mA, making it suitable for moderate power amplification and switching applications in industrial and military circuits.

What package type does this transistor use?

The device is housed in a TO-39