JANTXV2N2219A-Transistor Overview
The JANTXV2N2219A is a rugged, high-performance NPN bipolar junction transistor (BJT) designed for amplification and switching applications in demanding environments. Featuring a high collector current rating and voltage tolerance, it ensures reliable operation under industrial conditions. Its robust construction supports enhanced thermal stability and long-term durability, making it ideal for military, aerospace, and industrial electronics. This transistor delivers consistent gain and switching speed, facilitating efficient power management and signal control. For trusted sourcing and detailed technical support, visit IC Manufacturer.
JANTXV2N2219A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 800 mA |
| Power Dissipation (Ptot) | 625 mW (at 25??C) |
| DC Current Gain (hFE) | 40 to 300 (depending on IC) |
| Transition Frequency (fT) | 250 MHz |
| Package | TO-39 Metal Can |
JANTXV2N2219A-Transistor Key Features
- High Collector Current: Supports up to 800 mA, enabling efficient power amplification in medium-power circuits.
- Wide Voltage Tolerance: Withstands collector-emitter voltages up to 40 V, suitable for various industrial control applications.
- Enhanced Thermal Stability: Metal TO-39 package ensures effective heat dissipation for improved reliability in harsh environments.
- Broad Gain Range: Offers a DC current gain between 40 and 300, providing flexibility for signal amplification and switching tasks.
Typical Applications
- Used extensively in switching and amplification stages of industrial control systems, where reliable performance at medium power levels is critical.
- Applicable in audio amplification circuits requiring stable gain and low distortion under variable load conditions.
- Suitable for use in military-grade electronic assemblies due to its rugged construction and compliance with JAN (Joint Army-Navy) standards.
- Ideal for driver stages in relay and solenoid control circuits, where fast switching and moderate power handling are essential.
JANTXV2N2219A-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its high current capacity combined with robust voltage ratings and thermal reliability. Compared to standard plastic-packaged BJTs, the metal TO-39 encapsulation provides superior heat dissipation and improved mechanical stability. Its broad gain range and high transition frequency enable precise switching and amplification, offering enhanced performance in critical industrial and military applications where accuracy and durability are paramount.
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JANTXV2N2219A-Transistor Brand Info
The JANTXV2N2219A is a military-grade variant of the widely used 2N2219 transistor, produced following stringent Joint Army-Navy (JAN) standards for reliability and quality. This device is commonly manufactured by established semiconductor companies specializing in defense and industrial components. Its branding emphasizes compliance with rigorous screening, burn-in procedures, and extended temperature range operation, ensuring suitability for mission-critical applications requiring dependable transistor performance.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum collector current of 800 mA, making it suitable for medium-power amplification and switching applications in industrial and military environments.
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What package type does this transistor use and why is it important?
This device is housed in a TO-39 metal can package, which offers enhanced thermal conductivity and mechanical durability compared to plastic packages, ensuring reliable operation under high-stress conditions.
Can this transistor be used in high-frequency applications?
Yes, with a transition frequency (fT) of approximately 250







