JANTXV2N2060L-Dual-Transistor Overview
The JANTXV2N2060L-Dual-Transistor is a high-performance, military-grade dual NPN transistor designed for demanding industrial and aerospace applications. With its robust construction and tight parametric control, it delivers exceptional switching speed and high gain characteristics. This device supports precise linear amplification and switching functions while maintaining reliability under harsh environmental conditions. Engineered to meet JAN (Joint Army Navy) specifications, it ensures long-term stability, traceability, and durability, making it an ideal choice for engineers and sourcing specialists seeking a dependable transistor solution. For more detailed technical support and product availability, visit IC Manufacturer.
JANTXV2N2060L-Dual-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Dual NPN |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 0.8 A (max) |
| Power Dissipation (PD) | 1 W (max) |
| Current Gain (hFE) | 30 to 300 (depending on test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | -55??C to +125??C |
| Package Type | TO-18 Metal Can |
| Base-Emitter Voltage (VBE) | 1.2 V (max) |
JANTXV2N2060L-Dual-Transistor Key Features
- Dual NPN configuration: Provides compact integration of two transistors in a single package, saving board space and simplifying circuit design.
- High voltage rating (60 V): Enables use in power amplification and switching circuits where voltage tolerance is critical for safety and performance.
- Wide operating temperature range: Ensures reliable operation in extreme environments typical of aerospace and industrial systems.
- Military-grade JAN certification: Guarantees stringent quality and traceability standards, supporting mission-critical applications.
Typical Applications
- Signal amplification and switching in aerospace communication equipment, where reliability and precision are paramount.
- Industrial control systems requiring robust transistor performance under harsh environmental conditions.
- Pulse circuits and driver stages in military electronics benefiting from the device??s fast switching and stable gain.
- High-reliability instrumentation circuits where failure is not an option, leveraging the JAN qualification.
JANTXV2N2060L-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor offers superior reliability and military-grade quality compared to standard commercial counterparts. Its high voltage and current ratings combined with a wide temperature tolerance enhance operational stability. The integrated dual package reduces assembly complexity and footprint, while JAN certification assures traceability and performance consistency, making it preferable for mission-critical and industrial applications.
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JANTXV2N2060L-Dual-Transistor Brand Info
The JANTXV2N2060L-Dual-Transistor is manufactured under the JAN (Joint Army Navy) standards, indicating rigorous testing and qualification for military and aerospace use. Typically supplied by specialized semiconductor manufacturers focusing on high-reliability discrete devices, this transistor is part of a legacy series designed to meet stringent defense and industrial requirements. The JAN mark ensures compliance with strict quality and performance benchmarks, making it a trusted component among engineers working in demanding sectors.
FAQ
What is the maximum collector current rating for this dual transistor?
The maximum collector current rating for each transistor within the dual device is 0.8 amperes. This rating ensures safe operation within power amplification and switching circuits without risk of thermal or electrical overstress.
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Can this transistor operate reliably in extreme temperature environments?
Yes, it supports an operating temperature range from -55??C to +125??C, which makes it suitable for harsh and extreme environmental conditions typically encountered in aerospace and industrial applications.
What package type does this dual transistor use?
The device is housed in a TO-18 metal can package, which provides excellent mechanical stability






