JANTXV2N1715S-Transistor Overview
The JANTXV2N1715S is a robust silicon NPN bipolar junction transistor (BJT) designed for switching and amplification applications in demanding industrial environments. Featuring a high voltage rating and reliable gain characteristics, it supports efficient signal control with minimal distortion. Its JAN (Joint Army-Navy) designation ensures compliance with rigorous military standards, making it suitable for high-reliability electronics used in aerospace, defense, and industrial automation. This transistor balances power handling and switching speed, delivering consistent performance under varying thermal and electrical stresses. For sourcing and detailed technical support, consult IC Manufacturer.
JANTXV2N1715S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1.5 A (continuous) |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40 to 320 (at IC=150 mA) |
| Transition Frequency (fT) | 50 MHz (typical) |
| Package Type | TO-39 Metal Can |
JANTXV2N1715S-Transistor Key Features
- High Voltage Blocking Capability: Supports up to 80 V collector-base voltage, enabling use in moderate voltage switching circuits.
- Wide Current Handling: Continuous collector current of 1.5 A ensures suitability for medium power amplification and switching tasks.
- Military-Grade Reliability: JAN certification guarantees stringent manufacturing and testing standards for harsh environment operation.
- Excellent Gain Range: DC current gain between 40 and 320 allows flexible design choices for amplification stages.
- Metal Can Package: TO-39 housing offers enhanced thermal dissipation and mechanical stability in rugged applications.
Typical Applications
- Industrial control systems requiring reliable switching transistors capable of handling moderate power loads in harsh environments.
- Signal amplification in communication equipment where low noise and high gain are critical.
- Military and aerospace electronics demanding components with proven durability and steady performance under stress.
- Power management circuits in embedded systems where efficient transistor switching enhances overall device reliability.
JANTXV2N1715S-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability due to its JAN military-grade certification, ensuring consistent performance where standard commercial devices may fail. Its high voltage and current ratings, combined with a robust TO-39 metal can package, provide enhanced thermal and mechanical stability compared to plastic-encapsulated alternatives. These features make it ideal for industrial and aerospace applications requiring long-term durability and precise control.
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JANTXV2N1715S-Transistor Brand Info
The JANTXV2N1715S is typically manufactured by established semiconductor vendors specializing in military and industrial-grade components. This product adheres to the Joint Army-Navy (JAN) standards, reflecting its origin from trusted brands that prioritize quality and reliability for defense and aerospace markets. The TO-39 package and strict screening processes ensure it meets or exceeds MIL-STD requirements. Engineers sourcing this transistor can expect extensive traceability and documentation consistent with high-reliability procurement protocols.
FAQ
What environments is the JANTXV2N1715S transistor designed to operate in?
The transistor is designed for harsh environments including military, aerospace, and industrial applications. Its JAN certification ensures it withstands extreme temperatures, vibration, and electrical stress, making it suitable for demanding operational conditions.
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How does the TO-39 package benefit the transistor??s performance?
The TO-39 metal can package provides excellent thermal conductivity and mechanical protection. This improves heat dissipation under high power operation and enhances the device??s longevity in rugged







