JANTXV2N1613-Transistor – NPN High Voltage Transistor in TO-18 Metal Can Package

JANTXV2N1613-Transistor Overview

The JANTXV2N1613 is a high-reliability bipolar junction transistor (BJT) designed for military and aerospace applications requiring stringent performance criteria. This transistor offers robust operation under elevated temperatures and radiation exposure, making it ideal for harsh environment electronics. Its superior gain characteristics and stable switching behavior ensure dependable amplification and signal control in critical systems. Manufactured following JAN standards, it guarantees traceability and quality assurance required by defense contractors. For precise and reliable semiconductor solutions, IC Manufacturer provides detailed data and support for integrating this transistor into your designs.

JANTXV2N1613-Transistor Technical Specifications

JANTXV2N1613-Transistor Key Features

• Military-grade reliability: Designed to meet JAN standards ensuring consistent operation under extreme environmental stress.
• High gain and frequency response: Provides stable amplification up to 100 MHz, beneficial for RF and signal processing applications.
• Wide temperature tolerance: Operates between -55??C and +125??C, supporting demanding thermal environments.
• Robust packaging: The TO-18 metal can package enhances mechanical stability and thermal dissipation.

Typical Applications

• Military and aerospace signal amplification and switching circuits requiring high reliability and environmental resilience.
• Low noise preamplifiers in communication systems where signal integrity is critical.
• Instrumentation and control electronics that operate in wide temperature ranges and harsh conditions.
• High-frequency analog circuits benefiting from the transistor??s gain bandwidth and stable performance.

JANTXV2N1613-Transistor Advantages vs Typical Alternatives

This transistor stands out against standard commercial devices due to its stringent JAN qualification, ensuring exceptional durability and performance in extreme environments. Its enhanced gain and frequency response offer improved signal amplification accuracy. The robust metal can package provides superior thermal management and mechanical protection compared to plastic encapsulated alternatives, increasing lifespan and reliability in mission-critical systems.

JANTXV2N1613-Transistor Brand Info

The JANTXV2N1613 is produced by manufacturers specializing in military and aerospace semiconductors, adhering to Joint Army-Navy (JAN) standards. These standards certify the device for high reliability and traceability, meeting strict government and defense requirements. The transistor is sourced from trusted suppliers who maintain rigorous quality control and documentation, ensuring its suitability for applications where failure is not an option. This product is part of a broader portfolio of hermetically sealed, high-performance transistors designed for defense electronics and rugged industrial systems.

FAQ

What is the maximum collector current for the JANTXV2N1613 transistor?

The maximum collector current is rated at 200 milliamps. This ensures the transistor can handle moderate power amplification and switching tasks typical in military and aerospace circuits without risk of damage.

Can this transistor operate at high frequencies?

Yes, it supports a gain bandwidth product up to approximately 100 MHz, making it suitable for RF amplification and other high-frequency analog applications requiring stable performance.

What temperature range is this transistor specified for?

The device operates reliably across a wide temperature range from -55??C to +125??C, making it capable of functioning in extreme environmental conditions commonly found in defense and aerospace settings.

What packaging does the JANTXV2N1613 use and why is it important?