JANTX2N918UB-Transistor Overview
The JANTX2N918UB is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade applications. This transistor offers a maximum collector-base voltage of 25 V and a collector current rating of 100 mA, making it suitable for low-power signal amplification and fast switching tasks. Its robust construction ensures reliability under extreme environmental conditions, complying with stringent military standards. Ideal for engineers and sourcing specialists seeking a durable transistor with consistent gain and switching speed, this device supports precision circuit designs requiring dependable semiconductor components. For more detailed technical support and sourcing options, visit IC Manufacturer.
JANTX2N918UB-Transistor Key Features
- High transition frequency (fT) of 250 MHz: Enables rapid switching and high-frequency amplification for precise signal processing in RF circuits.
- Collector current (Ic) up to 100 mA: Supports moderate power handling, suitable for small-signal amplification and low-power switching applications.
- Collector-base voltage rating of 25 V: Provides safe operation within low-voltage circuits, ensuring device integrity and circuit stability.
- Low noise figure: Ideal for sensitive analog circuits requiring minimal signal distortion and high fidelity.
JANTX2N918UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Base Voltage (VCBO) | 25 V |
| Collector-Emitter Voltage (VCEO) | 25 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector Current (IC) | 100 mA |
| Power Dissipation (Ptot) | 400 mW |
| Transition Frequency (fT) | 250 MHz |
| Gain Bandwidth Product (hFE) | 40 to 110 (typical) |
| Operating Temperature Range | -65 ??C to +200 ??C |
JANTX2N918UB-Transistor Advantages vs Typical Alternatives
This transistor excels in providing high-frequency performance combined with military-grade reliability, surpassing typical commercial transistors in harsh environment tolerance. Its fast switching capability and consistent gain make it ideal for precision analog and RF circuits where sensitivity and accuracy are critical. The broad operating temperature range and robust voltage ratings ensure dependable operation in demanding industrial and aerospace applications.
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Typical Applications
- Low-noise RF amplifier stages requiring high transition frequency and stable gain for communication equipment and signal processing.
- Switching circuits in industrial control systems where fast response and moderate current handling are necessary.
- Signal amplification in instrumentation and measurement devices demanding low distortion and high reliability.
- Military and aerospace electronic systems that require components qualified for extended temperature ranges and harsh environments.
JANTX2N918UB-Transistor Brand Info
The JANTX2N918UB is part of the JAN (Joint Army-Navy) series, representing a class of transistors manufactured to meet stringent military standards for quality and reliability. This designation ensures compliance with rigorous screening processes, enhanced durability, and superior performance consistency. Designed for critical applications, the transistor is sourced from manufacturers specializing in semiconductor components for defense, aerospace, and industrial sectors, providing engineers with trusted and proven devices for mission-critical designs.
FAQ
What is the maximum collector current rating of the JANTX2N918UB transistor?
The transistor can handle a maximum collector current of 100 mA, making it suitable for low-power amplification and switching applications where moderate current levels are required without compromising device integrity.
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What frequency range is this transistor optimized for?
It features a transition frequency (fT) of 250 MHz, supporting high-frequency operation in RF amplification and fast switching circuits, ideal for communication and signal processing applications.
Is the JANTX2N918UB suitable for use in harsh environmental conditions?
Yes, this transistor is qualified for extended temperature ranges from -65 ??C up to +200 ??C, complying with military standards that ensure reliable performance in extreme environmental conditions such as aerospace and defense systems.
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What voltage ratings should be considered when designing circuits with this transistor?
The key voltage limits include a collector-base voltage of 25 V, collector-emitter voltage of 25 V, and emitter-base voltage of 6 V. Staying within these parameters ensures safe operation and prevents device damage.
How does the gain of this transistor vary across its operating range?
The gain (hFE) typically ranges from 40 to 110, depending on the operating conditions. This variation allows designers to optimize circuit performance for amplification requirements while maintaining consistent signal integrity.
