JANTX2N7368-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in various circuits.
  • It features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • The compact package type allows for board-space savings and easier integration into tight designs.
  • Ideal for switching applications, it helps improve performance in power management systems.
  • Designed for durability, this component maintains consistent performance over extended use.
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产品上方询盘

JANTX2N7368-Transistor Overview

The JANTX2N7368 is a high-reliability bipolar junction transistor (BJT) designed for military and aerospace applications requiring robust performance under extreme conditions. It features a silicon NPN planar epitaxial structure that ensures stable operation with a collector-emitter voltage rating of 80V and a collector current capacity of up to 3A. This transistor offers dependable switching and amplification capabilities with enhanced ruggedness, making it ideal for demanding industrial environments. Manufactured to stringent standards, it supports applications requiring long-term reliability and precise electrical characteristics. For detailed technical data and sourcing, visit the IC Manufacturer website.

JANTX2N7368-Transistor Key Features

  • High breakdown voltage: Rated at 80V collector-emitter voltage, it ensures safe operation in high-voltage circuits, protecting against voltage spikes.
  • Robust collector current handling: Supports continuous collector currents up to 3A, enabling reliable power amplification and switching tasks.
  • Military-grade construction: Qualified to JAN (Joint Army-Navy) standards, providing superior reliability for aerospace and defense electronics.
  • Low saturation voltage: Minimizes power loss during conduction, improving overall circuit efficiency and thermal management.

JANTX2N7368-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 3 A (continuous)
Power Dissipation (PD) 30 W
Gain Bandwidth Product (fT) ?? 3 MHz
Transition Frequency 3 MHz
Operating Temperature Range -55??C to +200??C
Package Type TO-39 metal can

JANTX2N7368-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and ruggedness compared to standard commercial devices, making it preferable for mission-critical and high-stress environments. Its high voltage and current ratings provide greater design flexibility, while the military-grade qualification ensures consistent performance under thermal and mechanical stress. The low saturation voltage reduces power loss, improving overall system efficiency and thermal stability compared to typical alternatives.

Typical Applications

  • High-reliability switching circuits in aerospace and defense systems, where long-term stability and robustness are essential for mission success.
  • Power amplification in communication equipment requiring stable gain and low distortion over wide temperature ranges.
  • Industrial control systems that demand durable transistors capable of handling moderate power levels with consistent performance.
  • Military-grade electronic assemblies where component qualification and traceability are mandated for operational safety and compliance.

JANTX2N7368-Transistor Brand Info

The JANTX2N7368 belongs to a family of transistors manufactured under strict Joint Army-Navy (JAN) standards, ensuring high reliability and traceability for defense and aerospace applications. This product is designed to meet rigorous quality requirements, including thermal cycling and mechanical stress tests. The metal TO-39 package enhances heat dissipation and mechanical robustness. This transistor is part of the trusted portfolio from manufacturers specializing in military-grade electronic components, offering engineers a dependable choice for critical system design.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 3 amperes. This rating ensures the device can handle moderate power levels safely in switching and amplification applications without exceeding thermal limits.

Can this transistor operate in high-temperature environments?

Yes, the transistor is rated for an operating temperature range from -55??C up to +200??C, making it suitable for harsh and high-temperature environments typical in aerospace and industrial settings.

What type of package does this transistor use?

This device is housed in a TO-39 metal can package, which provides excellent thermal conductivity and mechanical protection, enhancing reliability in demanding applications.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

The transistor has a transition frequency of approximately 3 MHz, making it suitable for low to moderate frequency amplification and switching applications but less ideal for very high-frequency use cases.

What standards does this transistor comply with?

The transistor meets Joint Army-Navy (JAN) specifications, indicating it has undergone rigorous testing for military and aerospace-grade reliability, including environmental stress and quality assurance measures.

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