JANTX2N718A-Transistor Overview
The JANTX2N718A is a silicon NPN bipolar junction transistor (BJT) designed for high reliability and military-grade applications. This transistor offers robust switching and amplification capabilities with dependable performance under demanding conditions. Its construction ensures stable operation in environments requiring stringent quality standards, making it well-suited for aerospace, defense, and industrial electronics. The device??s gain, voltage, and current ratings provide versatility for analog and digital circuits. Sourcing this transistor from a trusted IC Manufacturer ensures consistent quality and compliance with MIL-STD specifications.
JANTX2N718A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon Bipolar Junction |
| Collector-Base Voltage (VCBO) | 60 V |
| Collector-Emitter Voltage (VCEO) | 50 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A max |
| DC Current Gain (hFE) | 70 to 240 (varies by test conditions) |
| Power Dissipation (PC) | 1 W max |
| Transition Frequency (fT) | 100 MHz typical |
| Operating Temperature Range | -55??C to +200??C (JANTX military grade) |
JANTX2N718A-Transistor Key Features
- High Voltage Capability: With a collector-base voltage rating up to 60 V, it supports circuits requiring robust voltage handling.
- Reliable Current Gain: Ensures predictable amplification performance, critical for signal integrity in precision applications.
- Military-Grade Temperature Range: Rated from -55??C to +200??C for operation in extreme environments, enhancing system reliability.
- Low Power Dissipation: Supports efficient thermal management in compact designs, enabling longer device lifespan and system stability.
Typical Applications
- Military and aerospace electronic systems requiring high-reliability bipolar transistors for switching and amplification in harsh environments.
- Industrial control circuits where stable gain and voltage handling are necessary under wide temperature ranges.
- Signal amplification in analog circuits demanding consistent performance over extended operating conditions.
- General-purpose transistor applications that benefit from robust construction and trusted military-grade specifications.
JANTX2N718A-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its rigorous military-grade qualification, offering superior temperature tolerance and voltage capabilities versus commercial-grade counterparts. Its reliable current gain and low power dissipation make it ideal for demanding switching and amplification tasks. These features ensure enhanced operational stability and longevity, particularly in aerospace and defense electronics, where device failure is not an option.
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JANTX2N718A-Transistor Brand Info
The JANTX2N718A is a standardized military specification bipolar junction transistor originally produced by multiple manufacturers under MIL-STD-19500 compliance. It is commonly available from legacy semiconductor producers and distributors specializing in high-reliability components. The transistor??s designation reflects adherence to strict military quality standards, ensuring performance consistency and durability in critical applications. Sourcing from authorized suppliers guarantees authenticity and compliance with the necessary reliability certifications.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current for this device is 1 ampere. This rating ensures it can handle moderate current loads typical in switching and amplification circuits without compromising reliability.
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Can this transistor operate in extreme temperature environments?
Yes, it is rated for operation from -55??C to +200??C, meeting military-grade standards. This wide temperature range makes it suitable for harsh environmental conditions such as aerospace and defense systems.
What type of transistor is the JANTX2N718A?
It is a silicon NPN bipolar junction transistor (BJT), commonly used for switching and amplification purposes in various electronic circuits with demanding performance requirements.
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How does the current gain range affect circuit design?
The DC current gain (hFE) ranges from approximately 70 to 240 depending on the test conditions, allowing designers to predict amplification behavior and tailor biasing networks accordingly for optimal circuit







