JANTX2N6693-Transistor Overview
The JANTX2N6693 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications requiring robust switching and amplification capabilities. This transistor is characterized by a high voltage rating, substantial current handling, and reliable gain performance, making it suitable for military and industrial-grade circuits. Its construction ensures enhanced durability and stability under various environmental conditions. Engineers and sourcing specialists can rely on this transistor for applications requiring precise control of power and signal integrity. For more detailed technical insights, visit IC Manufacturer.
JANTX2N6693-Transistor Key Features
- High Collector-Emitter Voltage: Supports up to 100 V, enabling operation in high-voltage environments without breakdown risk.
- Maximum Collector Current of 15 A: Facilitates high power switching and amplification, essential for robust industrial circuits.
- Gain Bandwidth Product (fT) of 15 MHz: Ensures efficient high-frequency operation, benefiting signal amplification in fast-switching applications.
- Low Saturation Voltage: Reduces power losses and improves overall efficiency in switching applications.
- Hermetic TO-3 Package: Provides excellent thermal dissipation and mechanical protection, enhancing reliability in harsh environments.
JANTX2N6693-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector-Base Voltage (Vcbo) | 140 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 15 | A |
| Gain Bandwidth Product (fT) | 15 | MHz |
| DC Current Gain (hFE) | 30 to 70 | (typical range) |
| Power Dissipation (Pc) | 115 | W |
| Operating and Storage Junction Temperature | -65 to +200 | ??C |
| Package Type | TO-3 | – |
JANTX2N6693-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to typical BJTs in similar packages, delivering enhanced reliability in high-power and high-voltage industrial applications. Its hermetic TO-3 package ensures better thermal management than plastic equivalents, resulting in longer operational lifetimes. The balanced gain and frequency response contribute to efficient switching and amplification, making it a preferred choice for precision and ruggedness in challenging electronic systems.
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Typical Applications
- Power Amplification in high-voltage audio and RF circuits, where consistent gain and linearity are critical for signal integrity.
- Switching regulator circuits requiring robust current handling and low saturation voltage for improved efficiency.
- Industrial motor control systems demanding reliable high-current transistors for driving loads.
- Military and aerospace electronic systems needing components with wide temperature tolerance and hermetic sealing for harsh environments.
JANTX2N6693-Transistor Brand Info
The JANTX2N6693 is a military-grade transistor produced under stringent quality standards to meet defense and aerospace requirements. This product line is known for its rugged construction, hermetic packaging, and reliable performance under extreme conditions. It is widely recognized among engineers for dependable operation in critical applications demanding consistent electrical characteristics and environmental resilience.
FAQ
What are the maximum voltage ratings for this transistor?
This transistor supports a maximum collector-emitter voltage of 100 V and a collector-base voltage up to 140 V, enabling it to handle high-voltage circuits safely without breakdown.
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What type of package does the JANTX2N6693 come in?
It is housed in a hermetic TO-3 metal can package, which provides superior thermal dissipation and mechanical protection, essential for high-power and military applications.
What is the typical current gain range for this transistor?
The DC current gain (hFE) typically ranges between 30 and 70, allowing for efficient amplification across a broad range of operating conditions.
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Can this transistor operate at high temperatures?
Yes, it is rated for junction temperatures from -65 ??C to +200 ??C, making it suitable for use in harsh industrial and aerospace environments.
What applications is this transistor best suited for?
This device is ideal for power amplification, switching regulators, motor control, and military/aerospace electronics due to its high voltage, current capabilities, and rugged construction.
