JANTX2N6676-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • It features a high voltage rating that ensures stable operation under demanding electrical conditions.
  • The compact package offers board-space savings, facilitating integration into tight circuit layouts.
  • Ideal for power regulation tasks, it helps maintain consistent voltage levels in automotive or industrial systems.
  • Designed for durability, this component meets rigorous quality standards to ensure long-term reliability.
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JANTX2N6676-Transistor Overview

The JANTX2N6676 is a high-performance bipolar junction transistor (BJT) designed for military and industrial applications requiring stringent reliability and ruggedness. Classified as a silicon NPN transistor, it offers robust voltage and current handling capabilities, ensuring dependable switching and amplification in demanding environments. Its hermetically sealed metal can package enhances durability under harsh conditions. This transistor meets rigorous JAN (Joint Army-Navy) standards, making it particularly suited for aerospace, defense, and critical industrial systems where stable operation and long-term reliability are paramount. For detailed procurement information, visit IC Manufacturer.

JANTX2N6676-Transistor Key Features

  • High Voltage Handling: Capable of withstanding collector-emitter voltages up to 100V, facilitating use in diverse high-voltage circuits.
  • Robust Collector Current: Supports collector currents up to 10A, enabling reliable operation in power amplification and switching applications.
  • JAN Qualification: Complies with military JAN standards, ensuring performance consistency in extreme temperature and environmental conditions.
  • Hermetically Sealed Package: Metal can encapsulation protects against moisture and contaminants, enhancing long-term reliability and stability.

JANTX2N6676-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 10 A
Power Dissipation PD 40 W
DC Current Gain (hFE) hFE 40 to 160 ?C
Transition Frequency fT 5 MHz
Operating Temperature Range Top -65 to +200 ??C

JANTX2N6676-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard BJTs, combined with military-grade reliability through JAN certification. Its hermetic metal package ensures higher longevity and environmental resistance, making it preferable for mission-critical applications demanding stable performance under temperature extremes and mechanical stress. This robustness reduces failure rates and maintenance costs compared to typical plastic-encapsulated transistors.

Typical Applications

  • Military and aerospace power amplification stages where high voltage and current handling with reliable switching are essential for mission-critical systems.
  • Industrial motor control circuits requiring rugged transistors capable of sustained high current operations.
  • High-reliability switching in harsh environments such as oil and gas exploration or transportation electronics.
  • Signal amplification in communication systems demanding stable gain and low noise at elevated temperatures.

JANTX2N6676-Transistor Brand Info

The JANTX2N6676 transistor is produced under strict military specifications by established semiconductor manufacturers specializing in JAN-qualified components. This product line is recognized for delivering consistent performance, traceability, and compliance with defense standards. Its manufacture includes rigorous screening and testing to ensure the highest levels of reliability and quality, making it a trusted choice for engineers in defense and industrial sectors.

FAQ

What does the JAN qualification mean for this transistor?

JAN qualification indicates that the transistor meets military standards for reliability, performance, and environmental resilience. It undergoes stringent testing for temperature extremes, vibration, and shock, ensuring dependable operation in mission-critical applications.

Can this transistor operate at high temperatures?

Yes, the device is rated for operation from -65??C up to +200??C, making it suitable for harsh environments such as aerospace and industrial applications where temperature fluctuations are common.

What type of package does this transistor use?

The transistor is housed in a hermetically sealed metal can package, which provides excellent protection against moisture, contaminants, and mechanical damage, contributing to its long-term reliability.

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产品中间询盘

What is the maximum collector current supported?

This transistor supports a continuous collector current of up to 10A, enabling its use in power amplification and switching circuits requiring high current capacity.

How does the DC current gain vary in this transistor?

The DC current gain (hFE) ranges from 40 to 160, allowing flexibility in design for applications needing moderate to high gain characteristics depending on circuit requirements.

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