JANTX2N5682-Transistor Overview
The JANTX2N5682 is a high-performance NPN bipolar junction transistor designed for use in military and aerospace applications requiring robust reliability and precise switching capabilities. Featuring a high voltage rating and significant collector current capacity, this transistor is optimized for power amplification and switching in demanding environments. Its hermetically sealed metal can package ensures superior protection against environmental factors, enhancing device longevity and consistent performance. Engineered to meet stringent military standards, the JANTX2N5682 offers dependable operation across wide temperature ranges, making it a preferred choice for critical industrial and defense electronics. For detailed sourcing and technical support, visit IC Manufacturer.
JANTX2N5682-Transistor Key Features
- High Collector-Emitter Voltage (Vceo) of 100V: Enables reliable operation in high-voltage circuits, reducing the risk of breakdown under stress.
- Collector Current (Ic) up to 10A: Supports substantial power handling, suitable for switching and amplification in power control systems.
- Hermetically Sealed TO-39 Metal Can Package: Provides enhanced environmental protection and mechanical durability, ensuring long-term reliability.
- Gain Bandwidth Product (fT) of 10 MHz: Offers efficient high-frequency performance beneficial for RF and analog signal applications.
JANTX2N5682-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Polarity | NPN | |
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector-Base Voltage (Vcbo) | 150 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 10 | A |
| Gain Bandwidth Product (fT) | 10 | MHz |
| Power Dissipation (Pc) | 1.5 | W |
| Operating Junction Temperature (Tj) | 200 | ??C |
| Package Type | TO-39 Metal Can |
JANTX2N5682-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling compared to typical small-signal transistors, enhancing robustness in power switching and amplification roles. Its hermetic sealing and military-grade qualification ensure outstanding reliability under harsh environmental conditions. The high gain bandwidth product supports efficient operation in RF and analog circuits, delivering precise control and faster switching speeds essential for industrial and defense applications.
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Typical Applications
- Power amplification and switching in military communication systems where high voltage tolerance and reliability are critical.
- Industrial motor control circuits requiring robust transistors capable of handling higher collector currents.
- High-frequency analog signal processing in aerospace electronics.
- General-purpose switching applications in harsh environments demanding durable semiconductor devices.
JANTX2N5682-Transistor Brand Info
The JANTX2N5682 is a military-grade transistor manufactured under stringent quality controls to meet aerospace and defense standards. Recognized for its high voltage tolerance, significant collector current capability, and hermetically sealed metal can packaging, this device represents a trusted choice for engineers designing mission-critical systems. Its design and construction align with MIL specifications, ensuring dependable performance in extreme temperature and environmental conditions, reinforcing the product??s reputation for excellence in industrial and military markets.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current for this transistor is rated at 10 amperes, allowing it to handle significant loads in power switching and amplification applications without compromising reliability.
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What type of package does the JANTX2N5682 use?
This transistor is housed in a TO-39 metal can package, which provides hermetic sealing to protect internal components from moisture, dust, and mechanical stress, enhancing device longevity and performance stability.
What voltage ratings are specified for this device?
The transistor features a maximum collector-emitter voltage (Vceo) of 100 volts and a collector-base voltage (Vcbo) rating of 150 volts, making it suitable for high-voltage circuit environments.
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Is this transistor suitable for high-frequency applications?
Yes, with a gain bandwidth product (fT) of 10 MHz, it supports moderate high-frequency operation, making it effective for RF amplification and analog signal processing circuits.
What temperature range can this transistor reliably operate within?
Designed for military use, the transistor can operate at junction temperatures up to 200??C, ensuring stability and performance in extreme thermal environments typical of aerospace and industrial applications.
